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1. WO2020109924 - CHARGE PREAMPLIFIER DEVICE AND RADIATION DETECTING APPARATUS COMPRISING THE DEVICE

Publication Number WO/2020/109924
Publication Date 04.06.2020
International Application No. PCT/IB2019/059931
International Filing Date 19.11.2019
IPC
H03F 3/70 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
70Charge amplifiers
H03F 3/45 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
45Differential amplifiers
H03F 3/08 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
04with semiconductor devices only
08controlled by light
H03F 1/08 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
H03F 1/26 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
26Modifications of amplifiers to reduce influence of noise generated by amplifying elements
H01L 29/94 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92Capacitors with potential-jump barrier or surface barrier
94Metal-insulator-semiconductors, e.g. MOS
CPC
G01T 1/24
GPHYSICS
01MEASURING; TESTING
TMEASUREMENT OF NUCLEAR OR X-RADIATION
1Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16Measuring radiation intensity
24with semiconductor detectors
H01L 29/945
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
92Capacitors with potential-jump barrier or surface barrier
94Metal-insulator-semiconductors, e.g. MOS
945Trench capacitors
H03F 1/083
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
083in transistor amplifiers
H03F 1/26
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
26Modifications of amplifiers to reduce influence of noise generated by amplifying elements
H03F 2200/372
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
372Noise reduction and elimination in amplifier
H03F 3/087
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
04with semiconductor devices only
08controlled by light
087with IC amplifier blocks
Applicants
  • POLITECNICO DI MILANO [IT]/[IT]
Inventors
  • MELE, Filippo
  • BERTUCCIO, Giuseppe
Agents
  • POSTIGLIONE, Ferruccio
  • TANA, Maria Gabriella
  • MAZZOCCHI, Stefano
Priority Data
10201800001067129.11.2018IT
Publication Language English (EN)
Filing Language Italian (IT)
Designated States
Title
(EN) CHARGE PREAMPLIFIER DEVICE AND RADIATION DETECTING APPARATUS COMPRISING THE DEVICE
(FR) DISPOSITIF PRÉAMPLIFICATEUR DE CHARGE ET APPAREIL DE DÉTECTION DE RAYONNEMENT COMPRENANT LE DISPOSITIF
Abstract
(EN)
A charge preamplifier device (100) integrated in a chip (200) of semiconductive material comprising: an input (IN) for an input signal (iiN) and an output (OUT) for an output signal (VOUT); a substrate (202) of semiconductive material doped according to a first type of conductivity; an electrically insulating layer (204) placed on said substrate (202); a feedback capacitor (Cf) integrated in the chip (200) and comprising a first electrode (3) connected to the input (IN) and a second electrode (2) connected to the output (OUT). The second electrode (2) is formed by a doped conductive region (205) having a second type of conductivity, opposite to the first type of conductivity, and integrated in the substrate (202) in order to face the first electrode (3).
(FR)
Un dispositif préamplificateur de charge (100) intégré dans une puce (200) de matériau semi-conducteur comprend : une entrée (IN) pour un signal d'entrée (iiN) et une sortie (OUT) pour un signal de sortie (VOUT) ; un substrat (202) de matériau semi-conducteur dopé selon un premier type de conductivité ; une couche électriquement isolante (204) placée sur ledit substrat (202) ; un condensateur de rétroaction (Cf) intégré dans la puce (200) et comprenant une première électrode (3) connectée à l'entrée (IN) et une seconde électrode (2) connectée à la sortie (OUT). La seconde électrode (2) est formée par une région conductrice dopée (205) ayant un second type de conductivité, opposé au premier type de conductivité, et intégrée dans le substrat (202) afin de faire face à la première électrode (3).
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