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1. WO2020109923 - SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE

Publication Number WO/2020/109923
Publication Date 04.06.2020
International Application No. PCT/IB2019/059911
International Filing Date 19.11.2019
IPC
H01L 21/8234 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
H01L 27/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
H01L 27/088 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
H01L 21/8242 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8242Dynamic random access memory structures (DRAM)
H01L 27/108 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
H01L 27/1156 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
1156the floating gate being an electrode shared by two or more components
CPC
H01L 21/8234
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
H01L 27/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
H01L 27/088
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
H01L 27/108
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
H01L 27/1156
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
1156the floating gate being an electrode shared by two or more components
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
Applicants
  • 株式会社半導体エネルギー研究所 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP]/[JP]
Inventors
  • 山崎舜平 YAMAZAKI, Shunpei
  • 高橋絵里香 TAKAHASHI, Erika
  • 須澤英臣 SUZAWA, Hideomi
  • 笹川慎也 SASAGAWA, Shinya
Priority Data
2018-22481430.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEURS ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEURS
(JA) 半導体装置、および半導体装置の作製方法
Abstract
(EN)
Provided is a semiconductor device with good reliability. A first conductor and a second conductor are provided in contact with a first oxide thereon; a first insulator is provided to cover the first oxide, the first conductor, and the second conductor; the first insulator has an opening; the first oxide is exposed on the bottom of the opening; the side surface of the first conductor and the side surface of the second conductor are exposed on the side surface of the opening; in the opening, a second oxide is provided in contact with the first oxide, the side surface of the first conductor, and the second conductor; in the opening, a second insulator is provided through the second oxide; in the opening, a third conductor is provided through the second insulator; and the lower end portions of the side surface of the first conductor and the side surface of the second conductor are in contact with an ellipse or circle having a center above the first oxide.
(FR)
L'invention porte sur un dispositif à semi-conducteurs de bonne fiabilité. Un premier conducteur et un deuxième conducteur sont disposés en contact avec un premier oxyde sur ceux-ci ; un premier isolant est prévu pour recouvrir le premier oxyde, le premier conducteur et le deuxième conducteur ; le premier isolant comporte une ouverture ; le premier oxyde est exposé sur le fond de l'ouverture ; la surface latérale du premier conducteur et la surface latérale du deuxième conducteur sont exposées sur la surface latérale de l'ouverture ; dans l'ouverture, un second oxyde est disposé en contact avec le premier oxyde, la surface latérale du premier conducteur et le deuxième conducteur ; dans l'ouverture, un second isolant est disposé à travers le second oxyde ; dans l'ouverture, un troisième conducteur est disposé à travers le second isolant ; et les parties d'extrémité inférieure de la surface latérale du premier conducteur et de la surface latérale du deuxième conducteur sont en contact avec une ellipse ou un cercle ayant un centre au-dessus du premier oxyde.
(JA)
信頼性が良好な半導体装置を提供する。 第1の導電体、および第2の導電体は第1の酸化物上に接して設けられ、第1の絶縁体は、第1の 酸化物、第1の導電体、および第2の導電体を覆って設けられ、第1の絶縁体は、開口部を有し、 開口部の底面には、第1の酸化物が露出し、開口部の側面には、第1の導電体の側面、および第2 の導電体の側面が露出し、開口部内に、第2の酸化物は、第1の酸化物、第1の導電体の側面、お よび第2の導電体に接して設けられ、開口部内に、第2の絶縁体は、第2の酸化物を介して設けら れ、開口部内に、第3の導電体は、第2の絶縁体を介して設けられ、第1の導電体の側面、および 第2の導電体の側面の下端部は、第1の酸化物よりも上方に中心を有する楕円または円に接する。
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