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1. WO2020109787 - LONG-TERM STABLE OPTOELECTRONIC DEVICE

Publication Number WO/2020/109787
Publication Date 04.06.2020
International Application No. PCT/GB2019/053349
International Filing Date 27.11.2019
IPC
H01L 51/42 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01G 9/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
20Light-sensitive devices
CPC
H01G 9/2013
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
20Light-sensitive devices
2004characterised by the electrolyte, e.g. comprising an organic electrolyte
2013the electrolyte comprising ionic liquids, e.g. alkyl imidazolium iodide
H01L 51/0047
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0045Carbon containing materials, e.g. carbon nanotubes, fullerenes
0046Fullerenes, e.g. C60, C70
0047comprising substituents, e.g. PCBM
H01L 51/424
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
424comprising organic semiconductor-organic semiconductor hetero-junctions
Applicants
  • OXFORD UNIVERSITY INNOVATION LIMITED [GB]/[GB]
Inventors
  • SNAITH, Henry James
  • BAI, Sai
  • GAO, Feng
Agents
  • J A KEMP LLP
Priority Data
1819380.528.11.2018GB
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LONG-TERM STABLE OPTOELECTRONIC DEVICE
(FR) DISPOSITIF OPTOÉLECTRONIQUE STABLE À LONG TERME
Abstract
(EN)
The invention relates to an optoelectronic device comprising: (a) a layer comprising a crystalline A/M/X material, wherein the crystalline A/M/X material comprises a compound of formula: [A]a [M]b [X]c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18; and (b) an ionic liquid which is a salt comprising an organic cation and a counter anion, wherein the organic cation is present within the layer comprising the crystalline A/M/X material. The invention also relates to processes for producing an ionic liquid-modified film of a crystalline A/M/X material and a process for producing an optoelectronic device comprising an ionic-liquid modified film of a crystalline A/M/X material.
(FR)
La présente invention concerne un dispositif optoélectronique comprenant: (A) une couche comprenant un matériau A/M/X cristallin, le matériau A/M/X cristallin comprenant un composé de formule: [A]a [M b [X]c dans laquelle: [A] comprend un ou plusieurs cations A; [M] comprend un ou plusieurs cations M qui sont des cations métalliques ou métalloïdes; [X] comprend un ou plusieurs anions X; a est un nombre compris entre 1 et 6; b est un nombre compris entre 1 et 6; et c est un nombre compris entre 1 et 18; et (b) est un liquide ionique qui est un sel comprenant un cation organique et un contre-anion, lequel cation organique est présent dans la couche comprenant le matériau cristallin A/M/X. L'invention concerne également des procédés de production d'un film modifié par un liquide ionique d'un matériau A/M/X cristallin et un procédé de production d'un dispositif optoélectronique comprenant un film modifié par liquide ionique d'un matériau A/M/X cristallin.
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