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1. WO2020109754 - METHOD, SYSTEM AND DEVICE FOR MAGNETIC MEMORY

Publication Number WO/2020/109754
Publication Date 04.06.2020
International Application No. PCT/GB2019/053258
International Filing Date 15.11.2019
IPC
G11C 11/16 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
G11C 11/18 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
18using Hall-effect devices
G11C 11/56 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
CPC
G11C 11/161
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
161details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
G11C 11/1655
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1653Address circuits or decoders
1655Bit-line or column circuits
G11C 11/1659
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1659Cell access
G11C 11/1673
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1673Reading or sensing circuits or methods
G11C 11/1675
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1675Writing or programming circuits or methods
G11C 11/18
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
18using Hall-effect devices
Applicants
  • ARM LIMITED [GB]/[GB]
Inventors
  • JAISWAL, Akhilesh Ramlaut
  • BHARGAVA, Mudit
Agents
  • TLIP LTD
Priority Data
16/200,27626.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD, SYSTEM AND DEVICE FOR MAGNETIC MEMORY
(FR) PROCÉDÉ, SYSTÈME ET DISPOSITIF DESTINÉS À UNE MÉMOIRE MAGNÉTIQUE
Abstract
(EN)
Disclosed are techniques for forming and operating magnetic memory device, especially a dual-storage non-volatile magnetic memory device comprising a first magnetic tunnel junction component including a first terminal, the first magnetic tunnel junction component abutting a first surface of a metal layer and a second magnetic tunnel junction component including a second terminal, the second magnetic tunnel junction component abutting a second surface of the metal layer, wherein the metal layer includes a third terminal.
(FR)
L'invention concerne des techniques destinés à former et faire fonctionner un dispositif de mémoire magnétique, en particulier un dispositif de mémoire magnétique non volatile à double stockage comprenant un premier composant de jonction à effet tunnel magnétique comprenant une première borne, le premier composant de jonction à effet tunnel magnétique venant en butée contre une première surface d'une couche métallique et un second composant de jonction à effet tunnel magnétique comprenant une seconde borne, le second composant de jonction à effet tunnel magnétique venant en butée contre une seconde surface de la couche métallique, la couche métallique comprenant une troisième borne.
Also published as
Latest bibliographic data on file with the International Bureau