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1. WO2020109753 - FABRICATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICES

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[ EN ]

CLAIMS

1. A method comprising:

forming a structure on a first portion of a substrate while maintaining a second portion of the substrate exposed, the structure comprising at least a conductive film formed on the substrate and a correlated electron material (CEM) film formed over the conductive film;

depositing a sealing layer over the structure and at least a portion of the second portion of the substrate;

forming an insulative filling material over at least a portion of the sealing layer disposed over the second portion of the substrate; and

removing a portion of the insulative filling material prior to removal of the at least a portion of the sealing layer disposed over the second portion of the substrate.

2. The method of claim 1, further comprising forming a metal via filling the removed portion of the sealing layer to extend from an exposed metal layer to a metal layer disposed under the substrate.

3. The method of claim 1 or claim 2, wherein the removing of the portion of the sealing layer to expose the metal layer comprises performing a dry etch to remove the portion of the sealing layer.

4. The method of claim 3, wherein the dry etch comprises reactive ion etching.

5. The method of claim 3, wherein the dry etch comprises plasma sputter etch.

6. The method of any preceding claim, wherein the portion of the insulative filling material and the at least a portion of the sealing layer disposed over the second portion of the substrate are removed in a single etch process step to form a trench, and the method further comprises:

depositing a metal in the trench to form a metal via extending from an exposed metal layer to a metal layer disposed under the substrate.

7. The method of any preceding claim, wherein the sealing layer comprises an atomic or molecular concentration of at least 50.0% silicon nitride, silicon carbide or silicon carbon nitride, or any combination thereof.

8. The method of any preceding claim, wherein the sealing layer comprises a thickness of between about 2.0 nm and about 100.0 nm.

9. The method of any preceding claim, and further comprising:

forming the conductive film over a metal layer;

depositing one or more layers of CEM on the conductive film to form the CEM film;

forming a conductive overlay over the CEM film; and

removing a portion of the one or more layers of CEM film, a portion of the conductive overlay and a portion of the conductive film to expose the second portion of the substrate.

10. A switching device comprising:

a structure disposed over a first portion of a substrate, the structure comprising at least a conductive film disposed over the substrate, a correlated electron material (CEM) film disposed over the conductive film and a conductive overlay disposed over the CEM film;

a sealing layer disposed over the structure and at least a second portion of the substrate; and a conductive via extending through a discontinuity in the sealing layer over the second portion of the substrate, the conductive via being electrically connected to a metal layer disposed under the substrate.

11. The switching device of claim 10, wherein the sealing layer comprises an atomic or molecular concentration of at least 50.0% silicon nitride, silicon carbide or silicon carbon nitride, or any combination thereof, and comprising a thickness dimension of between about 2.0 nm and 100.0 nm.

12. The switching device of claim 10 or claim 11, wherein the conductive via is capable of conducting electrical signals between levels of a multilevel wafer.

13. The switching device of any of claims 10 to 12, further comprising an insulative filling material adjacent to the conductive via.

14. The switching device of any of claims 10 to 13, wherein the structure disposed over the first portion of the substrate comprises a sloped profile having a profile angle of between about 20.0° and about 80.0° with respect to a horizontal surface

15. A method comprising:

forming an etch-stop control layer over a device;

forming a first layer of insulative filling material over the etch-stop control layer;

initiating a process to etch a localized portion of the first layer of insulative material; and altering the process to etch the localized portion responsive to detection of removal of at least a portion of the etch-stop control layer.

16. The method of claim 15, wherein the device comprises a conductive overlay layer, the method further comprising, prior to the forming of the etch-stop control layer:

depositing a second layer of insulative filling material over the conductive overlay; and removing a portion of the second layer of insulative filling material to reveal a top surface of the conductive overlay that is coplanar with a top surface of a remaining portion of the second layer of insulative filling material adjacent to the device,

wherein the etch-stop control layer is formed over the top surface of the conductive overlay and the remaining portion of the second layer of insulative material.

17. The method of claim 16, wherein removing the portion of the second layer of insulative filing material to reveal the top surface of the conductive overlay comprises chemical mechanical

polishing to planarize the top surface of the conductive overlay and the top surface of the remaining portion of the second layer of insulative material.

18. The method of any of claims 15 to 17, wherein the etch-stop control layer is formed over a conductive overlay, and the method further comprises:

continuing the altered process to etch the localized portion until at least a portion of the conductive overlay is revealed.

19. The method of any of claims 15 to 18, wherein the insulative filling material comprises an insulative filling material having a relative dielectric constant of between about 2.0 and about 4.5.

20. The method of any of claims 15 to 19, wherein the insulative filling material is identical to the second insulative filling material.

21. The method of any of claims 15 to 20, wherein the etch-stop control layer comprises an atomic or molecular concentration of at least 50.0% silicon nitride or aluminum nitride, or combination thereof.

22. The method of any of claims 15 to 21, further comprising terminating the etching responsive to sensing one or more gaseous components of the etch-stop control layer in a chamber.

23. The method of any of claims 15 to 22, wherein the etch-stop control layer comprises a thickness of between about 1.0 nm and about 50.0 nm.

24. The method of any claims 15 to 23, further comprising depositing a metal on the conductive overlay following the terminating of the etching of the localized portion.

25. A method of coupling to a switching device, comprising:

forming an etch-stop control layer on an insulative filling material and on a switching device adjacent to the insulative filling material;

forming, over the etch-stop control layer, a layer of insulative filling material having a thickness of between about 5.0 nm to about 20.0 nm;

initiate a process to remove at least a portion of the layer of insulative filling material formed over the etch-stop control layer; and

alter the process to remove the at least the portion of the layer of insulative filling material responsive to removal of at least a portion of the etch-stop control layer.

26. The method of claim 25, further comprising depositing a hardmask over the insulative filling material prior to the removing of the at least a portion of the insulative filling material.

27. The method of claim 25 or claim 26, wherein the terminating of the removing of the at least the portion of the insulative filling material occurs responsive to detecting one or more gaseous components of the etch-stop control layer in a chamber.

28. The method of any of claims 25 to 27, wherein the etch-stop control layer comprises a thickness of between about 1.0 nm and about 50.0 nm.

29. A switching device comprising:

a first metal contact disposed over a switching device comprising a correlated electron material; a second metal contact disposed over a via, the first and second metal contacts being coplanar; and

at least a portion of an etch-stop control layer disposed between the first and second metal contacts.

30. The switching device of claim 29, wherein the at least a portion of the etch-stop control layer comprises a thickness of between about 2.0 nm and about 10.0 nm.

31. The switching device of claim 29 or claim 30, wherein the first and second metal contacts are formed adjacent to the at least the portion of the etch-stop control layer.