Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020109753 - FABRICATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICES

Publication Number WO/2020/109753
Publication Date 04.06.2020
International Application No. PCT/GB2019/053257
International Filing Date 15.11.2019
IPC
H01L 27/24 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
H01L 45/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
CPC
G11C 13/0007
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0007comprising metal oxide memory material, e.g. perovskites
G11C 13/0069
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
G11C 13/0097
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0097Erasing, e.g. resetting, circuits or methods
H01L 27/2463
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, ; e.g. resistance switching non-volatile memory structures
2463Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays, details of the horizontal layout
H01L 45/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
H01L 45/1233
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
04Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
12Details
122Device geometry
1233adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
Applicants
  • ARM LIMITED [GB]/[GB]
Inventors
  • HE, Ming
  • BESSER, Paul Raymond
  • ZHANG, Jingyan
  • RATHOR, Manuj
Agents
  • TLIP LTD
Priority Data
16/206,72530.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) FABRICATION OF CORRELATED ELECTRON MATERIAL (CEM) DEVICES
(FR) FABRICATION DE DISPOSITIFS EN MATÉRIAU À ÉLECTRONS CORRÉLÉS (CEM)
Abstract
(EN)
Subject matter disclosed herein relates to fabrication of a correlated electron material (CEM) switch (302). In particular embodiments a method include forming a structure (160, 170, 180) on a first portion of a substrate (262) while maintaining a second portion of the substrate exposed. A sealing layer (285) is deposited over the structure and over at least a portion of the exposed second portion of the substrate (262). A conductive via (365) is formed e.g. by way of a dry etch through the sealing layer (285) to contact an exposed metal layer (250). In embodiments, an etch-stop control layer is utilized to control an etching process prior to formation of metal contacts over the CEM switch and the conductive via.
(FR)
L'objet de la présente invention concerne la fabrication d'un commutateur (302) en matériau à électrons corrélés (CEM). Dans des modes de réalisation spécifiques, un procédé consiste à former une structure (160, 170, 180) sur une première partie d'un substrat (262) tout en conservant une seconde partie du substrat découverte. Une couche d'étanchéité (285) est déposée sur la structure et sur au moins une partie de la seconde partie découverte du substrat (262). Un trou d'interconnexion conducteur (365) est formé, par exemple, par gravure sèche à travers la couche d'étanchéité (285) de façon à entrer en contact avec une couche métallique à nu (250). Dans des modes de réalisation, une couche de commande d'arrêt de gravure est utilisée en vue de la commande d'un processus de gravure avant la formation de contacts métalliques sur le commutateur CEM et le trou d'interconnexion conducteur.
Also published as
Latest bibliographic data on file with the International Bureau