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1. WO2020109704 - ELECTROMAGNETIC RADIATION DETECTION STRUCTURE WITH OPTIMISED ABSORPTION AND METHOD FOR FORMING SUCH A STRUCTURE

Publication Number WO/2020/109704
Publication Date 04.06.2020
International Application No. PCT/FR2019/052776
International Filing Date 21.11.2019
IPC
G01J 5/02 2006.01
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
02Details
G01J 5/08 2006.01
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
02Details
08Optical features
G01J 5/20 2006.01
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
20using resistors, thermistors or semiconductors sensitive to radiation
G01J 5/24 2006.01
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
20using resistors, thermistors or semiconductors sensitive to radiation
22Electrical features
24Use of a specially-adapted circuit, e.g. bridge circuit
CPC
G01J 5/024
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
02Details
0225Shape of the cavity itself or of elements contained in or suspended over the cavity
024Special manufacturing steps or sacrificial layers or layer structures
G01J 5/0853
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
02Details
08Optical features
0803Optical elements not provided otherwise, e.g. optical manifolds, gratings, holograms, cubic beamsplitters, prisms, particular coatings
0853using infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
G01J 5/20
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
20using resistors, thermistors or semiconductors sensitive to radiation
G01J 5/24
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
20using resistors, thermistors or semiconductors sensitive to radiation
22Electrical features
24Use of a specially-adapted circuit, e.g. bridge circuit
Applicants
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR]/[FR]
Inventors
  • ALIANE, Abdelkader
  • OUVRIER-BUFFET, Jean-Louis
  • VIALLE, Claire
Agents
  • AHNER, Philippe
Priority Data
187202428.11.2018FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) ELECTROMAGNETIC RADIATION DETECTION STRUCTURE WITH OPTIMISED ABSORPTION AND METHOD FOR FORMING SUCH A STRUCTURE
(FR) STRUCTURE DE DÉTECTION DE RAYONNEMENT ÉLECTROMAGNÉTIQUE À ABSORPTION OPTIMISÉE ET PROCÉDÉ DE FORMATION D'UNE TELLE STRUCTURE
Abstract
(EN)
The invention concerns an electromagnetic radiation detection structure (10) comprising at least one absorbing element defining an absorption plane, and a MOSFET transistor (100). The transistor comprises: at least one first and at least one second zone (111, 112) of a first type of conductivity; at least one third zone (113) separating the first and second zones (111, 112) from each other; and a gate electrode. The first zone (111), the third zone (113) and the second zone (112) are formed respectively by a first, a third and a second layer that extend in the absorption plane parallel to each other and are arranged one after another in a direction perpendicular to the absorption plane. The gate electrode covers the third zone (113) along at least one lateral wall of said third zone (113).
(FR)
L'invention concerne une structure de détection (10) d'un rayonnement électromagnétique comportant au moins un élément absorbant définissant un plan d'absorption et un transistor (100) du type MOS-FET.Le transistor comporte: au moins une première et au moins une deuxième zone (111, 112) d'un premier type de conductivité; au moins une troisième zone (113) séparant l'une de l'autre la première et la deuxième zone (111, 112); une électrode de grille.La première zone (111), la troisième zone (113) et la deuxième zone (112) sont formées par respectivement par une première, une troisième et une deuxième couche qui s'étendent selon le plan d'absorption parallèlement les unes aux autres et qui se succèdent selon une direction perpendiculaire audit plan d'absorption. L'électrode de grille recouvre la troisième zone (113) le long d'au moins une paroi latérale de ladite troisième zone (113).
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