Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020109641 - FIELD-EFFECT TRANSISTOR (MOSFET) AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2020/109641
Publication Date 04.06.2020
International Application No. PCT/ES2019/070812
International Filing Date 28.11.2019
IPC
H01L 29/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/94 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92Capacitors with potential-jump barrier or surface barrier
94Metal-insulator-semiconductors, e.g. MOS
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
H01L 21/02376
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02373Group 14 semiconducting materials
02376Carbon, e.g. diamond-like carbon
H01L 21/02444
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02441Group 14 semiconducting materials
02444Carbon, e.g. diamond-like carbon
H01L 21/02527
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02527Carbon, e.g. diamond-like carbon
H01L 21/0405
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
0405the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
H01L 21/28512
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28512on semiconductor bodies comprising elements of Group IV of the Periodic System
H01L 21/8206
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
8206the substrate being a semiconductor, using diamond technology
Applicants
  • UNIVERSIDAD DE CÁDIZ [ES]/[ES]
  • CONSEJO SUPERIOR DE INVESTIGACIONES CIENTÍFICAS [ES]/[ES]
Inventors
  • LLORET VIEIRA, Fernando
  • ARAUJO GAY, Daniel
  • GODIGNON, Philippe
  • EON, David
  • PERNOT, Julien
  • BUSTARRET, Etienne
Agents
  • PONS ARIÑO, Angel
Priority Data
P20183116229.11.2018ES
Publication Language Spanish (ES)
Filing Language Spanish (ES)
Designated States
Title
(EN) FIELD-EFFECT TRANSISTOR (MOSFET) AND METHOD FOR MANUFACTURING SAME
(ES) TRANSISTOR DE EFECTO CAMPO (MOSFET) Y PROCEDIMIENTO DE FABRICACIÓN DEL MISMO
(FR) TRANSISTOR À EFFET DE CHAMP (MOSFET) ET PROCÉDÉ DE FABRICATION DE CELUI-CI
Abstract
(EN)
The invention relates to a field-effect transistor (MOSFET) and a method for manufacturing same. The invention comprises a high-power diamond metal-oxide-semiconductor field-effect transistor (MOSFET), as well as the method for manufacturing same by lateral/selective growth. The combination of growth on the substrate of the first layers with a standard vertical shape and the use of selective lateral growth on the etched-mesa structure grants the MOSFET device a novel three-dimensional structure. This avoids the edge effects of the metal contacts and the high internal electrical fields, improves the crystalline quality of the diamond and reduces the times, costs and size of the device, also making it more versatile for implementation on more complex architectures.
(ES)
Transistor de efecto campo (MOSFET) y procedimiento de fabricación del mismo. La invención comprende un transistor metal-oxido-semiconductor de efecto campo (MOSFET) de diamante para alta potencia, así como el procedimiento de fabricación mediante crecimiento lateral/selectivo. La combinación del crecimiento sobre el sustrato de las primeras capas de forma vertical estándar con el uso de un crecimiento lateral selectivo sobre la estructura mesa grabada confiere al dispositivo MOSFET de una estructura tridimensional novedosa. Esta evita los efectos de borde de los contactos metálicos y los altos campos eléctricos internos, mejora la calidad cristalina del diamante y reduce los tiempos, costes y tamaño del dispositivo dotándole a su vez de una mayor versatilidad para su implementación sobre arquitecturas más compleja.
(FR)
La présente invention concerne un transistor à effet de champ (MOSFET) et un procédé de fabrication de ce dernier. L'invention comprend un transistor métal-oxyde-semiconducteur à effet de champ (MOSFET) en diamant pour haute puissance, ainsi que le procédé de fabrication par croissance latérale/sélective. La combinaison de la croissance sur le substrat des premières couches de manière verticale standard et l'utilisation d'une croissance latérale sélective sur la structure mesa gravée confère au dispositif MOSFET une structure tridimensionnelle novatrice. Ceci évite les effets de bord des contacts métalliques et les champs électriques internes élevés, améliore la qualtié cristalline du diamant et réduit les temps, les coûts et les dimensions du dispositif ce qui lui confère une meilleure adaptabilité pour son implantation sur des architectures plus complexes.
Also published as
Latest bibliographic data on file with the International Bureau