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1. WO2020109536 - RADIATION SENSOR AND PRODUCTION METHOD THEREFOR

Publication Number WO/2020/109536
Publication Date 04.06.2020
International Application No. PCT/EP2019/083055
International Filing Date 29.11.2019
IPC
H01L 31/0203 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0203Containers; Encapsulations
H01L 31/0232 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0232Optical elements or arrangements associated with the device
H01L 31/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H01L 31/102 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
CPC
B29C 51/06
BPERFORMING OPERATIONS; TRANSPORTING
29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
51Shaping by thermoforming ; , i.e. shaping sheets or sheet like preforms after heating; , e.g. shaping sheets in matched moulds or by deep-drawing; Apparatus therefor
04Combined thermoforming and prestretching, e.g. biaxial stretching
06using pressure difference ; for prestretching
H01L 31/0203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0203Containers; Encapsulations ; , e.g. encapsulation of photodiodes
H01L 31/02327
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0232Optical elements or arrangements associated with the device
02327the optical elements being integrated or being directly associated to the device, e.g. back reflectors
H01L 31/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H01L 31/102
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
Applicants
  • VISHAY SEMICONDUCTOR GMBH [DE]/[DE]
Inventors
  • GOTTLOB, Heinrich
  • SCHMIDT, Manuel
  • GEBAUER, Christoph
Agents
  • MANITZ FINSTERWALD
Priority Data
10 2018 130 510.930.11.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) STRAHLUNGSSENSOR UND HERSTELLUNGSVERFAHREN HIERFÜR
(EN) RADIATION SENSOR AND PRODUCTION METHOD THEREFOR
(FR) CAPTEUR DE RAYONNEMENT ET SON PROCÉDÉ DE FABRICATION
Abstract
(DE)
Ein Strahlungssensor hat ein Substrat, darauf einen strahlungsempfindlichen Chip, einen an die Chip-Seitenflächenangefügten und den Chip umgebenden strahlungsundurchlässigen Rahmen, und eine strahlungsdurchlässigen Schicht über dem Chip. Der Rahmen ragt über einen wesentlichen Teil seines Innenumfangs hinweg nicht oder nicht wesentlich über die Oberkante des Chips. Die strahlungsdurchlässige Schicht steht in seitlicher Richtung über den Chip über und liegt auf dem Rahmen auf oder darüber.
(EN)
A radiation sensor comprises a substrate, a radiation-sensitive chip on the latter, a radiation-opaque frame that is attached to the chip side surfaces and surrounds the chip, and a radiation-transmissive layer over the chip. With a substantial part of its inner circumference, the frame does not project, or does not substantially project, above the upper edge of the chip. The radiation-transmissive layer protrudes above the chip in the lateral direction and rests on the frame or thereabove.
(FR)
Capteur de rayonnement comportant un substrat, une puce sensible au rayonnement disposée sur le capteur, un cadre imperméable au rayonnement relié à la face latérale de la puce et entourant la puce, et une couche perméable au rayonnement sur la puce. Sur une majeure partie de sa périphérie intérieure, le cadre ne fait pas saillie ou pas sensiblement saillie par rapport à l'arête supérieure de la puce. La couche perméable au rayonnement dépasse latéralement de la couche et s'appuie sur le cadre ou s'étend au-dessus de celui-ci.
Also published as
Latest bibliographic data on file with the International Bureau