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1. WO2020109534 - OPTOELECTRONIC SEMICONDUCTOR COMPONENT HAVING A REFRACTIVE INDEX MODULATION LAYER AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Publication Number WO/2020/109534
Publication Date 04.06.2020
International Application No. PCT/EP2019/083052
International Filing Date 29.11.2019
IPC
H01S 5/183 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
18Surface-emitting lasers
183having a vertical cavity
H01S 5/40 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02-H01S5/30128
H01S 5/42 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02-H01S5/30128
42Arrays of surface emitting lasers
CPC
H01S 5/18311
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18308having a special structure for lateral current or light confinement
18311using selective oxidation
H01S 5/18319
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18308having a special structure for lateral current or light confinement
18319comprising a periodical structure in lateral directions
H01S 5/18341
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18341Intra-cavity contacts
H01S 5/32341
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- heterostructures
323in AIIIBV compounds, e.g. AlGaAs-laser, ; InP-based laser
32308emitting light at a wavelength less than 900 nm
32341blue laser based on GaN or GaP
H01S 5/4087
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
4087emitting more than one wavelength
H01S 5/423
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
42Arrays of surface emitting lasers
423having a vertical cavity
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • BEHRINGER, Martin
  • HALBRITTER, Hubert
  • MOHAJERANI, Matin
  • BEHRES, Alexander
Agents
  • MÜLLER HOFFMANN & PARTNER PATENTANWÄLTE MBB
Priority Data
10 2018 130 560.530.11.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHES HALBLEITERBAUELEMENT MIT EINER BRECHUNGSINDEXMODULATIONSSCHICHT UND VERFAHREN ZUR HERSTELLUNG DES OPTOELEKTRONISCHEN HALBLEITERBAUELEMENTS
(EN) OPTOELECTRONIC SEMICONDUCTOR COMPONENT HAVING A REFRACTIVE INDEX MODULATION LAYER AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR COMPONENT
(FR) COMPOSANT SEMI-CONDUCTEUR OPTOÉLECTRONIQUE PRÉSENTANT UNE COUCHE DE MODULATION D'INDICE DE RÉFRACTION ET PROCÉDÉ DE FABRICATION DU COMPOSANT SEMI-CONDUCTEUR OPTOÉLECTRONIQUE
Abstract
(DE)
Ein optoelektronisches Halbleiterbauelement umfasst einen ersten Resonatorspiegel (110), einen zur Strahlungserzeugung geeigneten aktiven Bereich (115), und einen zweiten Resonatorspiegel (120), die jeweils entlang einer ersten Richtung übereinander angeordnet sind. Das optoelektronische Halbleiterbauelement (10) umfasst weiterhin eine Brechungsindexmodulationsschicht (133) innerhalb eines optischen Resonators zwischen dem ersten Resonatorspiegel (110) und dem zweiten Resonatorspiegel (120). Die Brechungsindexmodulationsschicht (133) weist erste Bereiche (136) eines ersten Materials mit einem ersten Brechungsindex sowie zweite Bereiche (138) eines zweiten Materials mit einem zweiten Brechungsindex auf, wobei die ersten Bereiche (136) in einer zur ersten Richtung senkrechten Ebene angrenzend an die zweiten Bereiche (138) angeordnet sind.
(EN)
An optoelectronic semiconductor component comprises a first resonator mirror (110), an active region (115) suitable for generating radiation, and a second resonator mirror (120), which are arranged one above another in each case along a first direction. The optoelectronic semiconductor component (10) furthermore comprises a refractive index modulation layer (133) within an optical resonator between the first resonator mirror (110) and the second resonator mirror (120). The refractive index modulation layer (133) has first regions (136) of a first material having a first refractive index and also second regions (138) of a second material having a second refractive index, wherein the first regions (136) are arranged in a manner adjoining the second regions (138) in a plane perpendicular to the first direction.
(FR)
L'invention concerne un composant semi-conducteur optoélectronique comprenant un premier miroir résonateur (110), une zone active (115) appropriée pour générer un rayonnement et un deuxième miroir résonateur (120), qui sont superposés à chaque fois le long d'une première direction. Le composant semi-conducteur optoélectronique (10) comprend en outre une couche de modulation de l'indice de réfraction (133) dans un résonateur optique entre le premier miroir résonateur (110) et le deuxième miroir résonateur (120). La couche de modulation d'indice de réfraction (133) présente des premières zones (136) d'un premier matériau présentant un premier indice de réfraction ainsi que des deuxièmes zones (138) d'un deuxième matériau présentant un deuxième indice de réfraction, les premières zones (136) étant disposées dans un plan perpendiculaire à la première direction de manière adjacente aux deuxièmes zones (138).
Also published as
Latest bibliographic data on file with the International Bureau