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1. WO2020109530 - OPTOELECTRONIC SEMICONDUCTOR COMPONENT HAVING A CURRENT DISTRIBUTION LAYER AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Publication Number WO/2020/109530
Publication Date 04.06.2020
International Application No. PCT/EP2019/083046
International Filing Date 29.11.2019
IPC
H01S 5/042 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping
042Electrical excitation
CPC
H01S 5/0421
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping, ; e.g. by electron beams
042Electrical excitation ; ; Circuits therefor
0421characterised by the semiconducting contacting layers
H01S 5/18305
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18305with emission through the substrate, i.e. bottom emission
H01S 5/18388
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18386Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
18388Lenses
H01S 5/347
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
347in AIIBVI compounds, e.g. ZnCdSe- laser
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • BEHRINGER, Martin
  • BEHRES, Alexander
  • MOHAJERANI, Matin
Agents
  • MÜLLER HOFFMANN & PARTNER PATENTANWÄLTE MBB
Priority Data
10 2018 130 562.130.11.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHES HALBLEITER-BAUELEMENT MIT STROMVERTEILUNGSSCHICHT UND VERFAHREN ZUR HERSTELLUNG DES OPTOELEKTRONISCHEN HALBLEITER-BAUELEMENTS
(EN) OPTOELECTRONIC SEMICONDUCTOR COMPONENT HAVING A CURRENT DISTRIBUTION LAYER AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR COMPONENT
(FR) COMPOSANT SEMI-CONDUCTEUR OPTOÉLECTRONIQUE COMPRENANT UNE COUCHE DE RÉPARTITION DE COURANT ET PROCÉDÉ DE FABRICATION DE CE COMPOSANT SEMI-CONDUCTEUR OPTOÉLECTRONIQUE
Abstract
(DE)
Ein optoelektronisches Halbleiter-Bauelement (10, 30) weist eine erste Halbleiterschicht (101, 102) von einem p-Leitfähigkeitstyp, eine zweite Halbleiterschicht (111, 112, 115) von einem n-Leitfähigkeitstyp sowie eine n-dotierte Stromverteilungsschicht (122), die ZnSe enthält und an die zweite Halbleiterschicht (111, 112, 115) angrenzt, auf.
(EN)
An optoelectronic semiconductor component (10, 30) has a first semiconductor layer (101, 102) of a p conductivity type, a second semiconductor layer (111, 112, 115) of an n conductivity type and also an n-doped current distribution layer (122) containing ZnSe and adjoining the second semiconductor layer (111, 112, 115).
(FR)
L'invention concerne un composant semi-conducteur optoélectronique (10, 30) qui présente une première couche semi-conductrice (101, 102) d'un premier type de conductivité p, une deuxième couche semi-conductrice (111, 112, 115) d'un deuxième type de conductivité n, ainsi qu'une couche de répartition de courant dopée n (122) qui contient du ZnSe et qui est adjacente à la deuxième couche semi-conductrice (111, 112, 115).
Also published as
Latest bibliographic data on file with the International Bureau