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1. WO2020109361 - GAS INLET DEVICE FOR A CVD REACTOR

Publication Number WO/2020/109361
Publication Date 04.06.2020
International Application No. PCT/EP2019/082679
International Filing Date 27.11.2019
IPC
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
CPC
C23C 16/455
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
C23C 16/45508
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45502Flow conditions in reaction chamber
45508Radial flow
C23C 16/4558
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45563Gas nozzles
4558Perforated rings
Applicants
  • AIXTRON SE [DE]/[DE]
Inventors
  • KOLLBERG, Marcel
  • RUDA Y WITT, Francisco
  • MUKINOVIC, Merim
  • PFISTERER, Mike
Agents
  • GRUNDMANN, Dirk
  • MÜLLER, Enno
  • BRÖTZ, Helmut
  • BOURREE, Hendrik
Priority Data
10 2018 130 139.128.11.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) GASEINLASSVORRICHTUNG FÜR EINEN CVD-REAKTOR
(EN) GAS INLET DEVICE FOR A CVD REACTOR
(FR) DISPOSITIF D’ENTRÉE DE GAZ POUR UN RÉACTEUR CVD
Abstract
(DE)
Die Erfindung betrifft eine Gaseinlassvorrichtung für einen CVD-Reaktor (1) mit einem an einem Gaszuleitungen (5) aufweisenden Befestigungsabschnitt (3) befestigbaren Gaseinlassorgan mit mehreren übereinander angeordneten Gasverteilniveaus, die jeweils eine Gasverteilwand (6) mit Gasaustrittsöffnungen (7) aufweisen, die mit einer von der Gasverteilwand (6) umgebenen Gasverteilkammern (8) strömungsverbunden sind, wobei in die Gasverteilkammer (8) jeweils ein Gaseinlasskanal (9.1, 9.2, 9.3, 9.4, 9.5) mit einer Mündung (10) mündet und die Gasverteilkammern (8) verschiedener Gasverteilniveaus durch einen Trennboden (11) voneinander getrennt sind.Erfindungsgemäß befindet sich zwischen der Mündung (10) des Gaseinlasskanals (9.1, 9.2, 9.3, 9.4, 9.5) und der Gasverteilwand (6) eine Strömungsbarriere.Ferner ist vorgesehen, dass die Gaseinlassvorrichtung aus mehreren scheibenförmigen Gasverteilkörpern (4.1, 4.2, 4.3, 4.4) besteht, die übereinander angeordnet sind.
(EN)
The invention relates to a gas inlet device for a CVD reactor (1) comprising a gas inlet organ that can be fastened to a fastening portion (3) having gas supply conduits (5), said organ comprising multiple gas distribution levels arranged one above the other, each level having a gas distribution wall (6) with gas outlet openings (7) that are fluidically connected to a gas distribution chamber (8) surrounded by the gas distribution wall (6), wherein the mouths (10) of respective gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) open into the gas distribution chamber (8) and the gas distribution chambers (8) of different gas distribution levels are separated from one another by a base partition (11). According to the invention, a flow barrier is situated between the mouth (10) of the gas inlet channel (9.1, 9.2, 9.3, 9.4, 9.5) and the gas distribution wall (6). In addition, the gas inlet device consists of multiple discoid gas distribution bodies (4.1, 4.2, 4.3, 4.4) arranged one above the other.
(FR)
L’invention concerne un dispositif d’entrée de gaz pour un réacteur CVD (1), ledit dispositif comportant un élément d’entrée de gaz qui peut être fixé à une partie de fixation (3), dotée de conduites d’alimentation en gaz (5), et présente plusieurs niveaux de répartition de gaz agencés de manière superposée, chaque niveau de répartition de gaz comportant une paroi de répartition de gaz (6) dotée d’orifices de sortie de gaz (7) qui sont reliés en écoulement à une des chambres de répartition de gaz (8) entourant la paroi de répartition de gaz (6), un conduit d’entrée de gaz (9.1, 9.2, 9.3, 9.4, 9.5) débouchant par une embouchure (10) dans la chambre de répartition de gaz (8) et les chambres de répartition de gaz (8) de niveaux de répartition de gaz différents étant séparées les unes des autres par un fond de séparation (11). Selon l’invention, une barrière d’écoulement se situe entre l’embouchure (10) du conduit d’entrée de gaz (9.1, 9.2, 9.3, 9.4, 9.5) et la paroi de répartition de gaz (6). En outre, le dispositif d’entrée de gaz se compose de plusieurs corps de répartition de gaz (4.1, 4.2, 4.3, 4.4) sous forme de plaques qui sont agencés de manière superposée.
Also published as
Latest bibliographic data on file with the International Bureau