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1. WO2020109333 - METHOD FOR DETERMINING A SHEET RESISTANCE OF A SEMICONDUCTOR SUBSTRATE AFTER PLASMA-IMMERSION ION IMPLANTATION AND THERMAL ANNEALING

Publication Number WO/2020/109333
Publication Date 04.06.2020
International Application No. PCT/EP2019/082633
International Filing Date 26.11.2019
IPC
H01L 21/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
H01L 31/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
C23C 14/48 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
48Ion implantation
CPC
H01J 37/32412
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32412Plasma immersion ion implantation
H01L 22/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
14for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
H01L 22/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
H01L 31/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
Applicants
  • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Inventors
  • LANTERNE, Adeline
  • DUBOIS, Sébastien
Agents
  • GROUPEMENT CAMUS LEBKIRI
Priority Data
187184226.11.2018FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) METHOD FOR DETERMINING A SHEET RESISTANCE OF A SEMICONDUCTOR SUBSTRATE AFTER PLASMA-IMMERSION ION IMPLANTATION AND THERMAL ANNEALING
(FR) PROCEDE DE DETERMINATION D'UNE RESISTANCE CARREE D'UN SUBSTRAT SEMICONDUCTEUR APRES IMPLANTATION IONIQUE PAR IMMERSION PLASMA ET RECUIT THERMIQUE
Abstract
(EN)
One aspect of the invention relates to a method for determining a sheet resistance of a semiconductor substrate after plasma-immersion ion implantation and thermal annealing, by means of a reflectance of the semiconductor substrate after its plasma-immersion ion implantation and before its thermal annealing, and of a lookup table indexing reflectance before thermal annealing and sheet resistance after thermal annealing.
(FR)
Un aspect de l'invention concerne un procédé de détermination d'une résistance carrée d'un substrat semiconducteur après implantation ionique par immersion plasma et recuit thermique, au moyen d'un facteur de réflexion du substrat semiconducteur après son implantation ionique par immersion plasma et avant son recuit thermique, et d'une table de correspondance entre facteur de réflexion avant recuit thermique et résistance carrée après recuit thermique.
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