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1. WO2020109153 - ELECTRICAL LEADS FOR TRENCHED QUBITS

Publication Number WO/2020/109153
Publication Date 04.06.2020
International Application No. PCT/EP2019/082186
International Filing Date 22.11.2019
IPC
H01L 39/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Details
H01L 39/24 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
24Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group H01L39/135
G06N 10/00 2019.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
NCOMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
10Quantum computers, i.e. computer systems based on quantum-mechanical phenomena
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
G06N 10/00
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
NCOMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
10Quantum computers, i.e. computer systems based on quantum-mechanical phenomena
H01L 39/025
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
02Details
025for Josephson devices
H01L 39/223
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
22Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
223Josephson-effect devices
H01L 39/2467
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
24Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
2419the superconducting material comprising copper oxide
2464After-treatment, e.g. patterning
2467Etching
H01L 39/2493
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
24Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
2493for Josephson devices
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US]
  • IBM UNITED KINGDOM LIMITED [GB]/[GB] (MG)
Inventors
  • VIVEKANANDA, Adiga
  • SANDBERG, Martin
  • CHOW, Jerry
Agents
  • WILLIAMS, Julian
Priority Data
16/202,82828.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ELECTRICAL LEADS FOR TRENCHED QUBITS
(FR) CONDUCTEURS ÉLECTRIQUES POUR BITS QUANTIQUES EN TRANCHÉE
Abstract
(EN)
Techniques for forming quantum circuits, including connections between components of quantum circuits, are presented. A trench (1006) is formed in a dielectric material (1002), by removing a portion of the dielectric material and a portion of conductive material (1004) layered on top of the dielectric material (1002), to enable creation of circuit components (1016, 1018) of a circuit. The trench can define a regular nub or compensated nub (1012, 1014) to facilitate creating electrical leads (1030, 1032) connected to the circuit components on a nub. The compensated nub can comprise recessed regions (1024, 1026) to facilitate depositing material during evaporation to form the leads. For compensated nub implementation, material is evaporated in two directions, with oxidation performed in between such evaporations, to contact leads and form a Josephson junction (1028). For regular nub implementation, material can be evaporated in four directions, with oxidation performed in between the third and fourth evaporations, to contact leads and form a Josephson junction.
(FR)
L'invention concerne des techniques de formation de circuits quantiques, comprenant des connexions entre des composants de circuits quantiques. Une tranchée (1006) est formée dans un matériau diélectrique (1002), par élimination d'une partie du matériau diélectrique et d'une partie d'un matériau conducteur (1004) stratifiées sur le dessus du matériau diélectrique (1002), de sorte à permettre la création de composants de circuit (1016, 1018) d'un circuit. La tranchée peut définir un nub régulier ou un nub compensé (1012, 1014) pour faciliter la création de conducteurs électriques (1030, 1032) connectés aux composants de circuit sur un nub. Le nub compensé peut comprendre des régions évidées (1024, 1026) pour faciliter le dépôt de matériau au cours de l'évaporation pour former des conducteurs. Pour la réalisation de nub compensé, le matériau est évaporé dans deux directions, l'oxydation étant effectuée entre de telles évaporations, pour mettre des conducteurs en contact et former une jonction Josephson (1028). Pour la réalisation de nub régulier, le matériau peut être évaporé dans quatre directions, l'oxydation étant effectuée entre les troisième et quatrième évaporations, pour mettre des conducteurs en contact et former une jonction Josephson.
Also published as
Latest bibliographic data on file with the International Bureau