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1. WO2020109110 - ION-SENSITIVE FIELD EFFECT TRANSISTOR

Publication Number WO/2020/109110
Publication Date 04.06.2020
International Application No. PCT/EP2019/081951
International Filing Date 20.11.2019
IPC
G01N 27/414 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
403Cells and electrode assemblies
414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
CPC
G01N 27/4146
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
403Cells and electrode assemblies
414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
4146involving nanosized elements, e.g. nanotubes, nanowires
Applicants
  • LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST) [LU]/[LU]
Inventors
  • PASCUAL GARCIA, Cesar
  • ROLLO, Serena
Agents
  • ARONOVA S.A.
Priority Data
10102028.11.2018LU
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ION-SENSITIVE FIELD EFFECT TRANSISTOR
(FR) TRANSISTOR À EFFET DE CHAMP SENSIBLE AUX IONS
Abstract
(EN)
An ISFET or ISFET-based sensor includes a source terminal, a drain terminal and a transistor channel between the source terminal and the drain terminal. The ISFET or ISFET-based sensor also comprises a fin extending between the source terminal and the drain terminal, the fin including the transistor channel, the fin having opposite sides with charge-sensitive surface for forming an interface with an analyte solution and an insulating barrier between the charge-sensitive surface and the transistor channel located centrally between the opposite sides of the fin. The transistor channel has a height-to-width ratio of at least 10.
(FR)
L'invention porte sur un capteur à transistor à effet de champ sensible aux ions (ISFET) ou basé sur un ISFET qui comprend une borne de source, une borne de drain et un canal de transistor entre la borne de source et la borne de drain. Le capteur à ISFET ou basé sur un ISFET comprend également une ailette s'étendant entre la borne de source et la borne de drain. L'ailette comprend le canal de transistor et possède des côtés opposés comportant une surface sensible à la charge pour former une interface avec une solution d'analyte et une barrière isolante entre la surface sensible à la charge et le canal de transistor situé au centre entre les côtés opposés de l'ailette. Le canal de transistor présente un rapport hauteur-largeur d'au moins 10.
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