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1. WO2020109019 - SENSOR ARRANGEMENT CONTAINING A NANOPARTICLE-BASED SEMICONDUCTOR STRUCTURAL ELEMENT HAVING A PN JUNCTION

Publication Number WO/2020/109019
Publication Date 04.06.2020
International Application No. PCT/EP2019/081357
International Filing Date 14.11.2019
IPC
G01N 27/12 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
02by investigating impedance
04by investigating resistance
12of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid
G01N 27/414 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
403Cells and electrode assemblies
414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
H01L 29/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
H01L 29/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
B82Y 15/00 2011.01
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE  OR TREATMENT OF NANOSTRUCTURES
15Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 15/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
15Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
G01N 27/127
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
02by investigating the impedance of the material
04by investigating resistance
12of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid ; , for detecting components in the fluid
125Composition of the body, e.g. the composition of its sensitive layer
127comprising nanoparticles
G01N 27/129
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
02by investigating the impedance of the material
04by investigating resistance
12of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid ; , for detecting components in the fluid
129Diode type sensors, e.g. gas sensitive Schottky diodes
G01N 27/4146
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
403Cells and electrode assemblies
414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
4146involving nanosized elements, e.g. nanotubes, nanowires
H01L 29/0665
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
Applicants
  • FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. [DE]/[DE]
Inventors
  • KLUMPP, Armin
Agents
  • SCHENK, Markus
  • ZIMMERMANN, Tankred
  • STÖCKELER, Ferdinand
  • ZINKLER, Franz
  • BURGER, Markus
  • HERSINA, Günter
  • KÖNIG, Andreas
  • SCHAIRER, Oliver
  • PFITZNER, Hannes
  • SCHLENKER, Julian
Priority Data
18208574.627.11.2018EP
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) SENSORANORDNUNG BEINHALTEND EIN NANOPARTIKELBASIERTES HALBLEITER-STRUKTURELEMENT MIT EINEM PN-ÜBERGANG
(EN) SENSOR ARRANGEMENT CONTAINING A NANOPARTICLE-BASED SEMICONDUCTOR STRUCTURAL ELEMENT HAVING A PN JUNCTION
(FR) ENSEMBLE CAPTEUR CONTENANT UN ÉLÉMENT STRUCTURAL SEMI-CONDUCTEUR À BASE DE NANOPARTICULES À JONCTION P-N
Abstract
(DE)
Die vorliegende Erfindung betrifft eine Sensoranordnung (60) mit einem nanopartikelbasierten Halbleiter-Strukturelement (10) mit einer ersten Nanopartikelstruktur (11) mit einer Vielzahl von ersten Nanopartikeln (11 1, 11 2, 11 3 ) und einer zweiten Nanopartikelstruktur (12) mit einer Vielzahl von zweiten Nanopartikeln (12 1, 12 2, 12 3 ). Die erste Nanopartikelstruktur (11) und die zweite Nanopartikelstruktur (12) sind direkt aneinander angrenzend angeordnet, sodass zumindest ein Teil der ersten Nanopartikel (11 1, 11 2, 11 3 ) und zumindest ein Teil der zweiten Nanopartikel (12 1, 12 2 , 12 s ) in direktem Kontakt miteinander sind, wobei sich an den jeweiligen Kontaktpunkten von ersten und zweiten Nanopartikeln (11 1, 11 2, 11 3, 12 i, 12 2, 12s) ein p-n-Übergang mit einer vorbestimmten Raumladungszone ausbildet.
(EN)
The present invention relates to a sensor arrangement (60) having a nanoparticle-based semiconductor structural element (10) having a first nanoparticle structure (11) with a plurality of first nanoparticles (11 1, 11 2, 11 3) and a second nanoparticle structure (12) with a plurality of second nanoparticles (12 1, 12 2, 12 3). The first nanoparticle structure (11) and the second nanoparticle structure (12) are arranged directly adjacent to each other, such that at least one part of the first nanoparticle (11 1, 11 2, 11 3) and at least one part of the second nanoparticle (12 1, 12 2 , 12 s) are in direct contact with each other, wherein, on the respective contact points of the first and second nanoparticles (11 1, 11 2, 11 3, 12 i, 12 2, 12s) a p-n junction is formed having a predetermined space charge zone.
(FR)
La présente invention concerne un ensemble capteur (60) contenant un élément structural semi-conducteur à base de nanoparticules (10) présentant une première structure nanoparticulaire (11) comprenant une pluralité de premières nanoparticules (11 1, 11 2, 11 3 ) et une deuxième structure nanoparticulaire (12) comprenant une pluralité de deuxièmes nanoparticules (12 1, 12 2, 12 3 ). La première structure nanoparticulaire (11) et la deuxième structure nanoparticulaire (12) sont disposées de manière directement adjacente de sorte qu’au moins une partie des premières nanoparticules ((11 1, 11 2, 11 3 ) et au moins une partie des deuxièmes nanoparticules (12 1, 12 2 , 12 s ) sont directement en contact les unes avec les autres, une jonction p-n comportant une zone de charge d’espace prédéfinie se formant au niveau des points de contact respectifs des premières et des deuxièmes nanoparticules (11 1, 11 2, 11 3, 12 i, 12 2, 12s).
Also published as
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