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1. WO2020108902 - METHOD FOR DETERMINING PATTERNING DEVICE PATTERN BASED ON MANUFACTURABILITY

Publication Number WO/2020/108902
Publication Date 04.06.2020
International Application No. PCT/EP2019/079562
International Filing Date 29.10.2019
IPC
G03F 1/36 2012.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction design processes
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G03F 1/36
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/70441
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
70433Layout for increasing efficiency, for compensating imaging errors, e.g. layout of exposure fields,; Use of mask features for increasing efficiency, for compensating imaging errors
70441Optical proximity correction
Applicants
  • ASML NETHERLANDS B.V. [NL]/[NL]
Inventors
  • BISWAS, Roshni
  • HOWELL, Rafael C.
  • ZHANG, Cuiping
  • JIA, Ningning
  • LIU, Jingjing
  • ZHANG, Quan
Agents
  • PETERS, John Antoine
Priority Data
62/773,47530.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR DETERMINING PATTERNING DEVICE PATTERN BASED ON MANUFACTURABILITY
(FR) PROCÉDÉ DE DÉTERMINATION D'UN MOTIF DE DISPOSITIF DE FORMATION DE MOTIFS SUR LA BASE DE LA FABRICABILITÉ
Abstract
(EN)
Described herein is a method for determining a patterning device pattern. The method includes obtaining (i) an initial patterning device pattern having at least one feature, and (ii) a desired feature size of the at least one feature, obtaining, based on a patterning process model, the initial patterning device pattern and a target pattern for a substrate, a difference value between a predicted pattern of the substrate image by the initial patterning device and the target pattern for the substrate, determining a penalty value related the manufacturability of the at least one feature, wherein the penalty value varies as a function of the size of the at least one feature, and determining the patterning device pattern based on the initial patterning device pattern and the desired feature size such that a sum of the difference value and the penalty value is reduced.
(FR)
L'invention concerne un procédé de détermination d'un motif de dispositif de formation de motifs. Le procédé consiste à obtenir (i) un motif de dispositif de formation de motifs initial ayant au moins une caractéristique, et (ii) une taille de caractéristique souhaitée de la ou des caractéristiques, à obtenir, sur la base d'un modèle de processus de formation de motifs, le motif de dispositif de formation de motifs initial et un motif cible pour un substrat, une valeur de différence entre un motif prédit de l'image de substrat par le dispositif de formation de motifs initial et le motif cible pour le substrat, à déterminer une valeur de pénalité associée à la fabricabilité de la ou des caractéristiques, la valeur de pénalité variant en fonction de la taille de la ou des caractéristiques, et à déterminer le motif de dispositif de formation de motifs sur la base du motif de dispositif de formation de motifs initial et de la taille de caractéristique souhaitée de telle sorte qu'une somme de la valeur de différence et de la valeur de pénalité est réduite.
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