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1. WO2020108387 - SEMICONDUCTOR DEVICE, FABRICATION METHOD THEREOF, PACKAGE AND FABRICATION METHOD THEREOF

Publication Number WO/2020/108387
Publication Date 04.06.2020
International Application No. PCT/CN2019/120074
International Filing Date 22.11.2019
IPC
H01L 23/482 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
482consisting of lead-in layers inseparably applied to the semiconductor body
H01L 25/065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/78
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
CPC
H01L 21/768
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
H01L 23/482
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements
482consisting of lead-in layers inseparably applied to the semiconductor body
H01L 25/065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/00
Applicants
  • CHANGXIN MEMORY TECHNOLOGIES, INC. [CN]/[CN]
Inventors
  • WU, Ping-Heng
  • WANG, Mei-Li
Agents
  • SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY
Priority Data
201811434025.728.11.2018CN
201821974884.028.11.2018CN
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE, FABRICATION METHOD THEREOF, PACKAGE AND FABRICATION METHOD THEREOF
(FR) DISPOSITIF SEMI-CONDUCTEUR, SON PROCÉDÉ DE FABRICATION, CONDITIONNEMENT ET SON PROCÉDÉ DE FABRICATION
Abstract
(EN)
A semiconductor device is disclosed. The device includes a stacked structure and an electrode. The stacked structure includes at least one die, the electrode is located on a side surface of the stacked structure, and the electrode has a length greater than or equal to a thickness of the die in a thickness direction of the die. The semiconductor device does not need a micro-bump for connection, thereby allowing a thinner stacked structure. The electrodes are disposed on the side surface of the stacked structure, thus it is not necessary to provide a connection at the wiring layer, or reserve connection position when designing the circuit. The length of the electrode in the thickness direction of the die is greater than or equal to the thickness of the die, facilitating the connection of circuits on a plurality of dies.
(FR)
L’invention concerne un dispositif semi-conducteur. Le dispositif inclut une structure empilée et une électrode. La structure empilée inclut au moins une puce, l’électrode est située sur une surface latérale de la structure empilée, et l’électrode a une longueur supérieure ou égale à une épaisseur de la puce dans une direction de l’épaisseur de la puce. Le dispositif semi-conducteur n’a pas besoin d’une microbille pour la connexion, permettant ainsi une structure empilée plus mince. Les électrodes sont disposées sur la surface latérale de la structure empilée, si bien qu’il n’est pas nécessaire de réaliser une connexion au niveau de la couche de câblage, ou de réserver une position de connexion lors de la conception du circuit. La longueur de l’électrode dans la direction de l’épaisseur de la puce est supérieure ou égale à l’épaisseur de la puce, facilitant la connexion de circuits sur une pluralité de puces.
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