Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020108383 - SILVER-SULFIDE-BASED INORGANIC THERMOELECTRIC MATERIAL, PREPARATION METHOD THEREFOR AND USE THEREOF

Publication Number WO/2020/108383
Publication Date 04.06.2020
International Application No. PCT/CN2019/120005
International Filing Date 21.11.2019
IPC
H01L 35/16 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
CPC
H01L 35/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
16comprising tellurium or selenium or sulfur
H01L 35/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
28operating with Peltier or Seebeck effect only
32characterised by the structure or configuration of the cell or thermo-couple forming the device ; including details about, e.g., housing, insulation, geometry, module
H01L 35/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
Applicants
  • 中国科学院上海硅酸盐研究所 SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES [CN]/[CN]
Inventors
  • 史迅 SHI, Xun
  • 仇鹏飞 QIU, Pengfei
  • 杨世琪 YANG, Shiqi
  • 梁佳晟 LIANG, Jiasheng
  • 王拓 WANG, Tuo
  • 陈立东 CHEN, Lidong
Agents
  • 上海瀚桥专利代理事务所(普通合伙) HANQIAO PATENT
Priority Data
201811435457.X28.11.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SILVER-SULFIDE-BASED INORGANIC THERMOELECTRIC MATERIAL, PREPARATION METHOD THEREFOR AND USE THEREOF
(FR) MATÉRIAU THERMOÉLECTRIQUE INORGANIQUE À BASE DE SULFURE D'ARGENT, SON PROCÉDÉ DE PRÉPARATION ET SON UTILISATION
(ZH) 一种硫化银基无机热电材料及其制备方法和应用
Abstract
(EN)
Disclosed are a silver-sulfide-based inorganic thermoelectric material, a preparation method therefor and the use thereof, wherein the chemical formula of the silver-sulfide-based inorganic thermoelectric material is Ag2(S1-xMx), M is at least one of Se and Te, and 0.001 ≤ x ≤ 0.9.
(FR)
L'invention concerne un matériau thermoélectrique inorganique à base de sulfure d'argent, son procédé de préparation et son utilisation. La formule chimique du matériau thermoélectrique inorganique à base de sulfure d'argent est Ag2(S1-xMx), où M est du Se et/ou du Te, et 0,001 ≤ x ≤ 0,9.
(ZH)
一种硫化银基无机热电材料及其制备方法和应用,所述硫化银基无机热电材料的化学式为Ag 2(S 1-xM x),其中M为Se元素和Te元素中的至少一种,0.001≤x≤0.9。
Also published as
Latest bibliographic data on file with the International Bureau