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1. WO2020108140 - METHOD FOR PREPARING ZIRCONIUM-ALUMINIUM OXIDE INSULATING LAYER THIN FILM AND LAMINATED STRUCTURE USING SOLUTION METHOD

Publication Number WO/2020/108140
Publication Date 04.06.2020
International Application No. PCT/CN2019/111352
International Filing Date 16.10.2019
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
CPC
H01L 21/02107
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
H01L 21/02178
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
02178the material containing aluminium, e.g. Al2O3
H01L 21/02189
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
02189the material containing zirconium, e.g. ZrO2
H01L 21/02225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
H01L 29/66742
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
Applicants
  • 华南理工大学 SOUTH CHINA UNIVERSITY OF TECHNOLOGY [CN]/[CN]
Inventors
  • 宁洪龙 NING, Honglong
  • 周尚雄 ZHOU, Shangxiong
  • 姚日晖 YAO, Rihui
  • 蔡炜 CAI, Wei
  • 朱镇南 ZHU, Zhennan
  • 梁志豪 LIANG, Zhihao
  • 张观广 ZHANG, Guanguang
  • 张旭 ZHANG, Xu
  • 梁宏富 LIANG, Hongfu
  • 彭俊彪 PENG, Junbiao
Agents
  • 广州市华学知识产权代理有限公司 GUANGZHOU HUAXUE INTELLECTUAL PROPERTY AGENCY CO., LTD.
Priority Data
201811434260.428.11.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD FOR PREPARING ZIRCONIUM-ALUMINIUM OXIDE INSULATING LAYER THIN FILM AND LAMINATED STRUCTURE USING SOLUTION METHOD
(FR) PROCÉDÉ DE PRÉPARATION D'UN FILM MINCE DE COUCHE ISOLANTE D'OXYDE D'ALUMINIUM-ZIRCONIUM ET STRUCTURE STRATIFIÉE UTILISANT LE PROCÉDÉ DE SOLUTION
(ZH) 一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法
Abstract
(EN)
Relating to the technical field of thin film transistors, a method for preparing a zirconium-aluminium oxide insulating layer thin film and a laminated structure using a solution method, the method comprising the following steps: dissolving zirconium nitrate pentahydrate and aluminium nitrate monohydrate in ethylene glycol monomethyl ether, and stirring and ageing to obtain a precursor solution; spin coating the obtained precursor solution on an ITO glass substrate, and then annealing at 300-500 °C for 1-2 hours to obtain a zirconium-aluminium oxide insulating layer thin film. Plating a circular Al electrode on the obtained zirconium-aluminium oxide insulating layer thin film by means of magnetron sputtering to obtain a MIM laminated structure. The present method can improve the physical and chemical properties of the insulating thin-film, for example by reducing the leakage current density from 6.71×10-5 A/cm2 to 3.8×10-7 A/cm2, and increasing the forbidden band width from 5.0 eV to 5.8 eV, the forbidden band width increase helping to increase the breakdown voltage.
(FR)
Concernant le domaine technique des transistors à film mince, procédé de préparation d'un film mince de couche isolante d'oxyde d'aluminium-zirconium et structure stratifiée utilisant un procédé de solution, le procédé comprenant les étapes suivantes : dissolution de pentahydrate de nitrate de zirconium et de monohydrate de nitrate d'aluminium dans de l'éther monométhylique d'éthylène glycol, et agitation et vieillissement pour obtenir une solution de précurseur ; dépôt par centrifugation de la solution de précurseur obtenue sur un substrat de verre ITO, puis recuit à 300-500 °C pendant 1-2 heures pour obtenir un film mince de couche isolante d'oxyde d'aluminium-zirconium. Placage d'une électrode d'Al circulaire sur le film mince de couche isolante d'oxyde d'aluminium-zirconium obtenu au moyen d'une pulvérisation magnétron pour obtenir une structure stratifiée MIM. Le présent procédé peut améliorer les propriétés physiques et chimiques du film mince isolant, par exemple par la réduction de la densité de courant de fuite de 6,71×10-5 A/cm2 to 3,8×10-7 A/cm2, et l'augmentation de la largeur de bande interdite de 5,0 eV à 5,8 eV, l'augmentation de largeur de bande interdite contribuant à augmenter la tension de claquage.
(ZH)
薄膜晶体管技术领域,一种溶液法制备锆铝氧化物绝缘层薄膜及叠层结构的方法,所述方法包括如下步骤:将五水合硝酸锆和九水合硝酸铝溶于乙二醇单甲醚中,搅拌老化得到前驱体溶液;在ITO玻璃衬底上旋涂所得的前驱体溶液,然后在300~500℃退火处理1~2h,得到锆铝氧化物绝缘层薄膜。在所得锆铝氧化物绝缘层薄膜上通过磁控溅射镀圆形Al电极,得到MIM叠层结构,所述方法能够提高绝缘薄膜的物理化学性能,如漏电流密度从6.71×10 -5A/cm 2降低为3.8×10 -7A/cm 2,禁带宽度从5.0eV提升为5.8eV,禁带宽度的增大将有利于提高击穿电压。
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