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1. WO2020108072 - NANO METAL OXIDE AND MANUFACTURING METHOD THEREFOR, QUANTUM DOT LIGHT EMITTING DIODE

Publication Number WO/2020/108072
Publication Date 04.06.2020
International Application No. PCT/CN2019/108338
International Filing Date 27.09.2019
IPC
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
CPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 程陆玲 CHENG, Luling
  • 杨一行 YANG, Yixing
Agents
  • 深圳市君胜知识产权代理事务所(普通合伙) JOHNSON INTELLECTUAL PROPERTY AGENCY (SHENZHEN)
Priority Data
201811432411.228.11.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) NANO METAL OXIDE AND MANUFACTURING METHOD THEREFOR, QUANTUM DOT LIGHT EMITTING DIODE
(FR) NANO-OXYDE MÉTALLIQUE ET SON PROCÉDÉ DE FABRICATION, DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES
(ZH) 一种纳米金属氧化物及其制备方法、量子点发光二极管
Abstract
(EN)
Disclosed are a nano metal oxide and a manufacturing method therefor, a quantum dot light emitting diode. The manufacturing method comprises the following steps: (S100) providing a composite material, the composite material comprising PAMAM dendrimers and metal ions bonded in the PAMAM dendrimer cavities; (S200) adding the composite material into a growth reaction system for nano metal oxide and mixing so as to obtain the nano metal oxide. The method can realize the uniform doping of metal ions into a nano metal oxide so as to obtain the nano metal oxide with less defects and better quality. The nano metal oxide is used as the material for the electron transfer layer of the quantum dot light emitting diode to adjust the electronic mobility of the quantum dot light emitting diode, thereby balancing the hole injection velocity of electrons and improving the light emitting efficiency.
(FR)
L'invention concerne un nano-oxyde métallique et son procédé de fabrication, une diode électroluminescente à points quantiques. Le procédé de fabrication comprend les étapes suivantes : (S100) fourniture d'un matériau composite, le matériau composite comprenant des dendrimères PAMAM et des ions métalliques liés dans les cavités de dendrimère PAMAM ; (S200) ajout du matériau composite dans un système de réaction de croissance pour nano-oxyde métallique et mélange de manière à obtenir le nano-oxyde métallique. Le procédé peut réaliser le dopage uniforme d'ions métalliques dans un nano-oxyde métallique de façon à obtenir le nano-oxyde métallique avec moins de défauts et une meilleure qualité. Le nano-oxyde métallique est utilisé en tant que matériau pour la couche de transfert d'électrons de la diode électroluminescente à points quantiques pour ajuster la mobilité électronique de la diode électroluminescente à points quantiques, ce qui permet d'équilibrer la vitesse d'injection de trous d'électrons et d'améliorer l'efficacité d'émission de lumière.
(ZH)
一种纳米金属氧化物及其制备方法、量子点发光二极管,其中,纳米金属氧化物的制备方法包括步骤:(S100)提供一种复合材料,所述复合材料包括PAMAM树形分子以及结合在所述PAMAM树形分子腔体内的金属离子;(S200)将所述复合材料加入到纳米金属氧化物生长反应体系中混合,得到所述纳米金属氧化物。该方法能够实现将金属离子均一地掺杂到纳米金属氧化物中,制得缺陷较少、质量较佳的纳米金属氧化物,将所述纳米金属氧化物作为量子点发光二极管的电子传输层材料,可以调节量子点发光二极管的电子迁移率,从而使其电子空穴注入速率达到平衡,进而提高其发光效率。
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