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1. WO2020108071 - QUANTUM DOT LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2020/108071
Publication Date 04.06.2020
International Application No. PCT/CN2019/108337
International Filing Date 27.09.2019
IPC
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
CPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 程陆玲 CHENG, Luling
  • 杨一行 YANG, Yixing
Agents
  • 深圳市君胜知识产权代理事务所(普通合伙) JOHNSON INTELLECTUAL PROPERTY AGENCY(SHENZHEN)
Priority Data
201811432412.728.11.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) QUANTUM DOT LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种量子点发光二极管及其制备方法
Abstract
(EN)
Disclosed are a quantum dot light-emitting diode and a manufacturing method therefor. The quantum dot light-emitting diode comprises a cathode (50), an anode (20) and a quantum dot light-emitting layer (30) between the cathode (50) and the anode (20), wherein an electron-transporting layer (40) is further arranged between the cathode (50) and the quantum dot light-emitting layer (30), and the material of the electron-transporting layer (40) is a mixed material constituted of a PAMAM dendrimer and a nano metal oxide. Since a PAMAM dendrimer is not only a σ donor but is also a π donor, the PAMAM dendrimer thus has a certain electron-transporting capability; however, since the PAMAM dendrimer itself does not have a free electron, the electron-transporting capability thereof is relatively weak compared with that of a metal oxide. Taking a mixed material constituted of a PAMAM dendrimer and a nano metal oxide as the material of the electron-transporting layer (40) can lower the electron mobility of the quantum dot light-emitting diode, so as to make the electron hole injection rate of the quantum dot light-emitting diode achieve a balance, thereby improving the light-emitting efficiency of the quantum dot light-emitting diode.
(FR)
L'invention concerne une diode électroluminescente à points quantiques et son procédé de fabrication. La diode électroluminescente à points quantiques comprend une cathode (50), une anode (20) et une couche électroluminescente à points quantiques (30) entre la cathode (50) et l'anode (20), une couche de transport d'électrons (40) étant en outre disposée entre la cathode (50) et la couche électroluminescente à points quantiques (30), et le matériau de la couche de transport d'électrons (40) étant un matériau mixte constitué d'un dendrimère PAMAM et d'un nano-oxyde métallique. Étant donné qu'un dendrimère PAMAM n'est pas seulement un donneur σ mais est également un donneur π, le dendrimère PAMAM présente ainsi une certaine capacité de transport d'électrons ; cependant, puisque le dendrimère PAMAM lui-même n'a pas d'électron libre, sa capacité de transport d'électrons est relativement faible par rapport à celle d'un oxyde métallique. Prendre un matériau mixte constitué d'un dendrimère PAMAM et d'un nano-oxyde métallique comme matériau de couche de transport d'électrons (40) peut abaisser la mobilité d'électrons de la diode électroluminescente à points quantiques, de manière à permettre au taux d'injection de trous d'électrons de la diode électroluminescente à points quantiques d'atteindre un équilibre, ce qui permet d'améliorer l'efficacité d'émission de lumière de la diode électroluminescente à points quantiques.
(ZH)
一种量子点发光二极管及其制备方法,其中,所述量子点发光二极管包括阴极(50)、阳极(20)以及设置在所述阴极(50)和阳极(20)之间的量子点发光层(30),所述阴极(50)和量子点发光层(30)之间还设置有电子传输层(40),所述电子传输层(40)材料为由PAMAM树形分子和纳米金属氧化物组成的混合材料。由于PAMAM树形分子既是σ给予体又是π给予体,这使得PAMAM树形分子具有一定的电子传输能力,但是由于PAMAM树形分子本身不具有自由电子,因此其电子传输能力相对金属氧化物而言较弱。采用由PAMAM树形分子和纳米金属氧化物组成的混合材料作为电子传输层(40)材料,可降低量子点发光二极管的电子迁移率,从而使量子点发光二极管的电子空穴注入速率达到平衡,进而提高量子点发光二极管的发光效率。
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