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1. WO2020108070 - PREPARING METHOD FOR QUANTUM DOT LIGHT-EMITTING DIODE

Publication Number WO/2020/108070
Publication Date 04.06.2020
International Application No. PCT/CN2019/108335
International Filing Date 27.09.2019
IPC
H01L 51/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 聂志文 NIE, Zhiwen
  • 杨一行 YANG, Yixing
Agents
  • 深圳市君胜知识产权代理事务所(普通合伙) JOHNSON INTELLECTUAL PROPERTY AGENCY(SHENZHEN)
Priority Data
201811420343.826.11.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) PREPARING METHOD FOR QUANTUM DOT LIGHT-EMITTING DIODE
(FR) PROCÉDÉ DE PRÉPARATION DE DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES
(ZH) 一种量子点发光二极管的制备方法
Abstract
(EN)
A preparing method for a quantum dot light-emitting diode. The quantum dot light-emitting diode is a positive-type device. The method comprises the steps of: providing an anode; forming a hole function layer on a surface of the anode; forming a layer of short-chain ligand compound on a surface of the hole function layer; and forming a quantum dot light-emitting layer on a surface of the short-chain ligand compound. The method can obtain stable quantum dots, and can greatly improve the recombination of electron/hole pairs in excitons and improve the device efficiency. In addition, the ligand exchange method has the advantages of simple steps, short operation time, and effective avoidance of influence on other film layers.
(FR)
La présente invention concerne un procédé de préparation d'une diode électroluminescente à points quantiques. La diode électroluminescente à points quantiques est un dispositif de type positif. Le procédé comprend les étapes consistant : à fournir une anode; à former une couche à fonction de trou sur une surface de l'anode; à former une couche de composé ligand à chaîne courte sur une surface de la couche à fonction de trou; et à former une couche électroluminescente à points quantiques sur une surface du composé ligand à chaîne courte. Le procédé peut obtenir des points quantiques stables, et peut considérablement améliorer la recombinaison de paires électron/trou dans des excitons et améliorer l'efficacité du dispositif. De plus, le procédé d'échange de ligands présente les avantages d'étapes simples, d'un temps de fonctionnement court et d'éviter efficacement l'influence sur d'autres couches de film.
(ZH)
一种量子点发光二极管的制备方法,所述量子点发光二极管为正型器件,方法包括步骤:提供阳极;在所述阳极表面形成空穴功能层;在所述空穴功能层表面形成一层短链配体化合物;在所述短链配体化合物表面形成量子点发光层。该方法不但可以获得稳定的量子点,且可以大大提高电子/空穴对在激子中的复合,提高器件效率。同时,该配体交换方法具有步骤简单、操作时间短、且能有效的避免对其他膜层的影响等优点。
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