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1. WO2020108069 - NANO METAL OXIDE, PREPARATION METHOD THEREFOR, AND QUANTUM DOT LIGHT-EMITTING DIODE

Publication Number WO/2020/108069
Publication Date 04.06.2020
International Application No. PCT/CN2019/108329
International Filing Date 27.09.2019
IPC
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/54 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
54Selection of materials
B82Y 30/00 2011.01
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE  OR TREATMENT OF NANOSTRUCTURES
30Nanotechnology for materials or surface science, e.g. nanocomposites
CPC
B82Y 30/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
30Nanotechnology for materials or surface science, e.g. nanocomposites
C01B 13/14
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
13Oxygen; Ozone; Oxides or hydroxides in general
14Methods for preparing oxides or hydroxides in general
C01G 53/04
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
53Compounds of nickel
04Oxides; Hydroxides
C01G 9/02
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
9Compounds of zinc
02Oxides; Hydroxides
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 程陆玲 CHENG, Luling
  • 杨一行 YANG, Yixing
Agents
  • 深圳市君胜知识产权代理事务所(普通合伙) JOHNSON INTELLECTUAL PROPERTY AGENCY (SHENZHEN)
Priority Data
201811432400.428.11.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) NANO METAL OXIDE, PREPARATION METHOD THEREFOR, AND QUANTUM DOT LIGHT-EMITTING DIODE
(FR) NANO-OXYDE MÉTALLIQUE, SON PROCÉDÉ DE PRÉPARATION ET DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES
(ZH) 一种纳米金属氧化物及其制备方法、量子点发光二极管
Abstract
(EN)
Disclosed are a nano metal oxide, a preparation method therefor, and a quantum dot light-emitting diode, wherein the preparation method for the nano metal oxide comprises the steps of providing a composite material, which comprises a PAMAM dendrimer and a metal ion bonded within the cavity of the PAMAM dendrimer; and mixing the composite material and an initial nano metal oxide in a polar solvent, such that the metal ion in the composite material is ionized and then coordinated and bonded with an oxygen vacancy on the surface of the initial nano metal oxide so as to obtain the nano metal oxide. By the method, a nano metal oxide with fewer surface defects can be obtained. The use of the nano metal oxide as an electron transport layer material of a quantum dot light-emitting diode can adjust the electronic mobility of the quantum dot light-emitting diode, such that the electron-hole injection rate thereof achieves a balance, and the luminous efficiency thereof is thus improved.
(FR)
La présente invention concerne un nano-oxyde métallique, son procédé de préparation et une diode électroluminescente à points quantiques, le procédé de préparation du nano-oxyde métallique comprenant les étapes consistant à fournir un matériau composite, qui comprend un dendrimère PAMAM et un ion métallique lié à l'intérieur de la cavité du dendrimère PAMAM ; et mélanger le matériau composite et un nano-oxyde métallique initial dans un solvant polaire, de telle sorte que l'ion métallique dans le matériau composite est ionisé, puis coordonné et lié à une lacune d'oxygène sur la surface du nano-oxyde métallique initial de façon à obtenir le nano-oxyde métallique. Le procédé permet d'obtenir un nano-oxyde métallique présentant moins de défauts de surface. L'utilisation du nano-oxyde métallique comme matériau de couche de transport d'électrons d'une diode électroluminescente à points quantiques permet d'ajuster la mobilité électronique de la diode électroluminescente à points quantiques, de telle sorte que son taux d'injection d'électrons-trous atteint un équilibre, et son efficacité lumineuse est ainsi améliorée.
(ZH)
一种纳米金属氧化物及其制备方法、量子点发光二极管,其中,所述纳米金属氧化物的制备方法包括步骤:提供一种复合材料,所述复合材料包括PAMAM树形分子以及结合在所述PAMAM树形分子腔体内的金属离子;将所述复合材料和初始纳米金属氧化物在极性溶剂中混合,使复合材料中的金属离子电离后与初始纳米金属氧化物表面的氧空位配位结合,得到所述纳米金属氧化物。通过该方法能够制得表面缺陷较少的纳米金属氧化物,将所述纳米金属氧化物作为量子点发光二极管的电子传输层材料,可以调节量子点发光二极管的电子迁移率,从而使其电子空穴注入速率达到平衡,进而提高其发光效率。
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