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1. WO2020108068 - QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR

Publication Number WO/2020/108068
Publication Date 04.06.2020
International Application No. PCT/CN2019/108324
International Filing Date 27.09.2019
IPC
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H01L 51/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 梁柱荣 LIANG, Zhurong
  • 曹蔚然 CAO, Weiran
  • 钱磊 QIAN, Lei
Agents
  • 深圳市君胜知识产权代理事务所(普通合伙) JOHNSON INTELLECTUAL PROPERTY AGENCY(SHENZHEN)
Priority Data
201811419198.126.11.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 一种量子点发光二极管及其制备方法
Abstract
(EN)
A quantum dot light-emitting diode and a preparation method therefor. The quantum dot light-emitting diode comprises an anode, a quantum dot light-emitting layer, and a cathode; the quantum dot light-emitting layer is provided between the anode and the cathode; a first modification layer provided between the anode and the quantum dot light-emitting layer is further comprised; the first modification layer comprises PAMAM; the PAMAM is doped with transition metal cations. The first modification layer is provided between the anode and the quantum dot light-emitting layer and is used for modifying the anode, so that the work function of the anode can be improved, thereby improving a hole injection effect and further improving performance of a device. Furthermore, a second modification layer is provided between the cathode and the quantum dot light-emitting layer and is used for modifying the cathode, so that the work function of the modified cathode is reduced, thereby improving an electron injection effect and further improving performance of the device.
(FR)
L'invention concerne une diode électroluminescente à points quantiques et son procédé de préparation. La diode électroluminescente à points quantiques comprend une anode, une couche électroluminescente à points quantiques et une cathode ; la couche électroluminescente à points quantiques est disposée entre l'anode et la cathode ; une première couche de modification disposée entre l'anode et la couche électroluminescente à points quantiques est en outre comprise ; la première couche de modification comprend du PAMAM ; le PAMAM est dopé avec des cations de métaux de transition. La première couche de modification est disposée entre l'anode et la couche électroluminescente à points quantiques et est utilisée pour modifier l'anode, de sorte que la fonction de travail de l'anode peut être améliorée, ce qui permet d'améliorer un effet d'injection de trous et d'améliorer davantage les performances d'un dispositif. En outre, une seconde couche de modification est disposée entre la cathode et la couche électroluminescente à points quantiques et est utilisée pour modifier la cathode, de sorte que la fonction de travail de la cathode modifiée soit réduite, ce qui permet d'améliorer un effet d'injection d'électrons et d'améliorer davantage les performances du dispositif.
(ZH)
一种量子点发光二极管及其制备方法,其中所述量子点发光二极管,包括阳极、量子点发光层及阴极,所述量子点发光层设置在所述阳极与所述阴极之间,还包括设置于所述阳极与所述量子点发光层之间的第一修饰层,所述第一修饰层包括PAMAM,所述PAMAM中掺杂有过渡金属阳离子。通过将第一修饰层设置在阳极与量子点发光层之间,用于修饰阳极,可以提高阳极的功函数,从而提高空穴的注入效果,进而提高器件的性能。还通过将第二修饰层设置在阴极与量子点发光层之间,用于修饰阴极,经修饰后的阴极的功函数会有所降低,从而提高电子注入效果,进而提高器件的性能。
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