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1. WO2020107978 - QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR

Publication Number WO/2020/107978
Publication Date 04.06.2020
International Application No. PCT/CN2019/103478
International Filing Date 30.08.2019
IPC
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
CPC
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants
  • TCL科技集团股份有限公司 TCL TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 梁柱荣 LIANG, Zhurong
  • 曹蔚然 CAO, Weiran
  • 钱磊 QIAN, Lei
Agents
  • 深圳中一联合知识产权代理有限公司 SHENZHEN ZHONGYI UNION INTELLECTUAL PROPERTY AGENCY CO., LTD.
Priority Data
201811443013.029.11.2018CN
201811443037.629.11.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR
(FR) DIODE ÉLECTROLUMINESCENTE À POINTS QUANTIQUES ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 量子点发光二极管及其制备方法
Abstract
(EN)
A quantum dot light-emitting diode and a preparation method therefor. The quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer provided between the anode and the cathode, wherein an electron transport layer is disposed between the quantum dot light-emitting layer and the cathode, and the electron transport layer is provided with an ionic-liquid material on a surface thereof. The ionic-liquid material has characteristics such as stable chemical properties, a high degree of bonding, and strong resistance against water and oxygen, and can form a dense ionic-liquid material layer to improve carrier transport and alleviate defects on the surface of an electron transport layer, thereby reducing the transfer potential barrier of carriers inside the device and improving the light-emitting properties of the device. The ionic-liquid material also covers the surface of the electron transport layer so as to effectively resolve the issue in which the surface of an electron transport layer is not completely covered, has holes, or is uneven.
(FR)
Diode électroluminescente à points quantiques et son procédé de préparation. La diode électroluminescente à points quantiques comprend une anode, une cathode et une couche électroluminescente à points quantiques disposée entre l'anode et la cathode, une couche de transport d'électrons étant disposée entre la couche électroluminescente à points quantiques et la cathode, et la couche de transport d'électrons étant pourvue d'un matériau liquide ionique sur une surface de celle-ci. Le matériau liquide ionique présente des caractéristiques telles que des propriétés chimiques stables, un degré élevé de liaison et une forte résistance contre l'eau et l'oxygène, et peut former une couche de matériau liquide ionique dense pour améliorer le transport de porteurs et atténuer des défauts sur la surface d'une couche de transport d'électrons, ce qui permet de réduire la barrière de potentiel de transfert de porteurs à l'intérieur du dispositif et d'améliorer les propriétés d'émission de lumière du dispositif. Le matériau liquide ionique recouvre également la surface de la couche de transport d'électrons de façon à résoudre efficacement le problème selon lequel la surface d'une couche de transport d'électrons n'est pas complètement recouverte, comporte des trous, ou est irrégulière.
(ZH)
一种量子点发光二极管及其制备方法,该量子点发光二极管包括阳极、阴极以及设置在所述阳极和所述阴极之间的量子点发光层,所述量子点发光层与所述阴极之间设置有电子传输层,所述电子传输层的表面设置有离子液体材料。因离子液体材料具有化学性质稳定、黏结度大、阻隔水氧能力强等特点,其可以形成一层致密的离子液体材料层,一方面能够提高载流子传输,钝化该电子传输层表面的缺陷,从而降低器件内部载流子的传输势垒,提高器件的发光性能;同时离子液体材料覆盖在电子传输层表面,有效地克服了电子传输层表面覆盖不全或存在针孔或表面不平整的缺陷。
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