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1. WO2020107896 - TRANSPARENT CONDUCTIVE FILM AND PREPARATION METHOD THEREFOR

Publication Number WO/2020/107896
Publication Date 04.06.2020
International Application No. PCT/CN2019/096449
International Filing Date 18.07.2019
IPC
H01B 5/14 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
5Non-insulated conductors or conductive bodies characterised by their form
14comprising conductive layers or films on insulating-supports
CPC
C23C 14/0652
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
0641Nitrides
0652Silicon nitride
C23C 14/08
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
08Oxides
C23C 14/10
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
10Glass or silica
C23C 14/185
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
14Metallic material, boron or silicon
18on other inorganic substrates
185by cathodic sputtering
C23C 14/205
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
14Metallic material, boron or silicon
20on organic substrates
205by cathodic sputtering
C23C 14/35
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
Applicants
  • 明达光电(厦门)有限公司 INTEX OPTOELECTRONICS (XIAMEN) CO., LTD [CN]/[CN]
Inventors
  • 张志清 ZHANG, Zhiqing
  • 刘荣隆 LIU, Lungyung
Agents
  • 厦门市新华专利商标代理有限公司 XIAMEN SHINHWA PATENT & TRADEMARK AGENCY CO., LTD.
Priority Data
201811451109.130.11.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) TRANSPARENT CONDUCTIVE FILM AND PREPARATION METHOD THEREFOR
(FR) FILM CONDUCTEUR TRANSPARENT ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种透明导电膜及其制备方法
Abstract
(EN)
Disclosed are a transparent conductive film and a preparation method therefor. The transparent conductive film comprises a transparent substrate (1), and a medium layer (2), a seed layer (3), a functional layer (4) and a protective layer (5), which are sequentially stacked on the transparent substrate. The functional layer is a metal conductive layer, with the thickness thereof being 2-15 nm. By means of using a metal conductive layer to form the functional layer and setting the thickness of the functional layer to be in the range of 2-15 nm, the surface resistance of the transparent conductive film is 10 Ω/m 2 or below, the transparent conductive film is not too thick, and the transparent conductive film can be applied to a large touch screen.
(FR)
La présente invention concerne un film conducteur transparent et son procédé de fabrication. Le film conducteur transparent comprend un substrat transparent (1), et une couche de support (2), une couche de germe (3), une couche fonctionnelle (4) et une couche de protection (5), qui sont empilées de manière séquentielle sur le substrat transparent. La couche fonctionnelle est une couche conductrice métallique dont l'épaisseur est de 2 à 15 nm. Au moyen de l'utilisation d'une couche conductrice métallique pour former la couche fonctionnelle et du réglage de l'épaisseur de la couche fonctionnelle dans la plage de 2 à 15 nm, la résistance de surface du film conducteur transparent est de 10 Ω/m 2 ou moins, le film conducteur transparent n'est pas trop épais, et le film conducteur transparent peut être appliqué à un grand écran tactile.
(ZH)
一种透明导电膜及其制备方法,透明导电膜包括透明基片(1)以及依次层叠设置在透明基层上的介质层(2)、种子层(3)、功能层(4)和保护层(5),该功能层为金属导电层,其厚度为2-15nm。通过采用金属导电层形成功能层,并将功能层的厚度设置在2-15nm的范围内,使得透明导电膜的面电阻在10Ω/m 2以下,且透明导电膜的厚度不会过厚,该透明导电膜可以应用于大屏幕触摸屏上。
Also published as
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