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1. WO2020107753 - THIN-FILM TRANSISTOR AND PREPARATION METHOD AND SYSTEM THEREFOR

Publication Number WO/2020/107753
Publication Date 04.06.2020
International Application No. PCT/CN2019/079275
International Filing Date 22.03.2019
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
H01L 21/26506
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
26506in group IV semiconductors
H01L 29/42384
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
42316for field-effect transistors
4232with insulated gate
42384for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
H01L 29/66757
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
6675Amorphous silicon or polysilicon transistors
66757Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
H01L 29/78675
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78651Silicon transistors
7866Non-monocrystalline silicon transistors
78672Polycrystalline or microcrystalline silicon transistor
78675with normal-type structure, e.g. with top gate
Applicants
  • 武汉华星光电技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 聂晓辉 NIE, Xiaohui
  • 张嘉伟 ZHANG, Jiawei
Agents
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT&TRADEMARK AGENCY
Priority Data
201811459682.730.11.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) THIN-FILM TRANSISTOR AND PREPARATION METHOD AND SYSTEM THEREFOR
(FR) TRANSISTOR À FILM MINCE ET PROCÉDÉ DE PRÉPARATION ET SYSTÈME À CET EFFET
(ZH) 薄膜晶体管、薄膜晶体管制备方法及制备系统
Abstract
(EN)
A thin-film transistor and a preparation method and system therefor. The thin-film transistor comprises a substrate (10), a buffer layer (20), an active layer (30), and a gate insulation layer (50). Doping modification is performed on a side region of the active layer (30), so that the surface thereof becomes a high-resistance region. The gate insulation layer (50) is prepared by using chemical deposition process, which avoids forming a weak channel current when edges are unintentionally opened during operation due to thin gate insulation layer (50), improving the electrical reliability of the thin-film transistor.
(FR)
La présente invention concerne un transistor à film mince et un procédé de préparation et un système à cet effet. Le transistor à film mince comprend un substrat (10), une couche tampon (20), une couche active (30) et une couche d'isolation de grille (50). Une modification de dopage est effectuée sur une région latérale de la couche active (30), de sorte que sa surface devienne une région à haute résistance. La couche d'isolation de grille (50) est préparée à l'aide d'un procédé de dépôt chimique, ce qui évite la formation d'un courant de canal faible lorsque des bords sont accidentellement ouverts pendant le fonctionnement, en raison de la couche d'isolation de grille mince (50), ce qui améliore la fiabilité électrique du transistor à film mince.
(ZH)
一种薄膜晶体管、薄膜晶体管制备方法及制备系统,所述薄膜晶体管包括基板(10),缓冲层(20),有源层(30)和栅极绝缘层(50),对所述有源层(30)侧面区域掺杂改性,将其表层变为高电阻区域,再利用化学沉积工艺制备栅极绝缘层(50),避免了因所述栅极绝缘层(50)偏薄导致的工作时边缘非故意开启形成弱沟道电流,提高了所述薄膜晶体管电学可靠性。
Also published as
Latest bibliographic data on file with the International Bureau