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1. WO2020107723 - ARRAY SUBSTRATE AND DISPLAY PANEL

Publication Number WO/2020/107723
Publication Date 04.06.2020
International Application No. PCT/CN2019/075611
International Filing Date 20.02.2019
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
CPC
H01L 27/124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
H01L 29/78633
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78606with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
78633with a light shield
Applicants
  • 武汉华星光电技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 蔡光育 CAI, Guangyu
Agents
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT & TRADEMARK AGENCY
Priority Data
201811451208.X30.11.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) ARRAY SUBSTRATE AND DISPLAY PANEL
(FR) SUBSTRAT MATRICIEL ET PANNEAU D'AFFICHAGE
(ZH) 一种阵列基板及显示面板
Abstract
(EN)
Provided are an array substrate and a display panel. The array substrate comprises a first metal layer and an active layer. The metal layer comprises a first metal unit in the middle of same, and a second metal unit and a third metal unit at two ends thereof. The active layer comprises a channel region in the middle of same, and a source-doped region and a drain-doped region at two ends thereof. The first metal unit is arranged opposite the channel region; and the second metal unit and the third metal unit are respectively connected to the source-doped region and the drain-doped region.
(FR)
L'invention concerne un substrat matriciel et un panneau d'affichage. Le substrat matriciel comprend une première couche métallique et une couche active. La couche métallique comprend une première unité métallique au milieu de celle-ci, et une deuxième unité métallique et une troisième unité métallique au niveau de deux extrémités de celle-ci. La couche active comprend une région de canal au milieu de celle-ci, et une région à source dopée et une région à drain dopé au niveau de deux extrémités de celle-ci. La première unité métallique est disposée à l'opposé de la région de canal ; et la deuxième unité métallique et la troisième unité métallique sont respectivement connectées à la région à source dopée et à la région à drain dopé.
(ZH)
本申请提出了一种阵列基板及显示面板。阵列基板包括第一金属层和有源层。第一金属层包括中间的第一金属单元以及两端的第二金属单元和第三金属单元。有源层包括中间的沟道区以及两端的源极掺杂区和漏极掺杂区。其中,第一金属单元与沟道区相对设置,第二金属单元和第三金属单元分别与源极掺杂区和漏极掺杂区连接。
Also published as
Latest bibliographic data on file with the International Bureau