Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020107544 - METHOD FOR PREPARING ISOLATION AREA OF GALLIUM OXIDE DEVICE

Publication Number WO/2020/107544
Publication Date 04.06.2020
International Application No. PCT/CN2018/121423
International Filing Date 17.12.2018
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
CPC
H01L 21/0223
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
02227formation by a process other than a deposition process
0223formation by oxidation, e.g. oxidation of the substrate
H01L 29/0649
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0603characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
0642Isolation within the component, i.e. internal isolation
0649Dielectric regions, e.g. SiO2 regions, air gaps
Applicants
  • 中国电子科技集团公司第十三研究所 THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 吕元杰 LV, Yuanjie
  • 王元刚 WANG, Yuangang
  • 周幸叶 ZHOU, Xingye
  • 谭鑫 TAN, Xin
  • 宋旭波 SONG, Xubo
  • 梁士雄 LIANG, Shixiong
  • 冯志红 FENG, Zhihong
Agents
  • 石家庄国为知识产权事务所 SHIJIAZHUANG GOWELL INTELLECTUAL PROPERTY LAW FIRM
Priority Data
201811450087.730.11.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD FOR PREPARING ISOLATION AREA OF GALLIUM OXIDE DEVICE
(FR) PROCÉDÉ DE PRÉPARATION D'UNE ZONE D'ISOLATION D'UN DISPOSITIF À OXYDE DE GALLIUM
(ZH) 一种氧化镓器件隔离区的制备方法
Abstract
(EN)
Disclosed is a method for preparing an isolation area (3) of a gallium oxide device, the method comprising: depositing a mask layer (2) on a gallium oxide material (1); removing a preset portion region of the mask layer (2); preparing an isolation area (3) in a position, corresponding to the preset portion region, on the gallium oxide material (1) by using a high-temperature oxidation technique, with the isolation area (3) being located between active areas of the gallium oxide device; and removing the remaining mask layer (2) on the gallium oxide material (1). The isolation area (3) is prepared by using the high-temperature oxidation technique, which prevents damage to the gallium oxide device during the preparation of the isolation area (3), thereby achieving isolation between the active areas of the gallium oxide device.
(FR)
Procédé de préparation d'une zone d'isolation (3) d'un dispositif à oxyde de gallium, le procédé consistant à : déposer une couche de masque (2) sur un matériau d'oxyde de gallium (1) ; retirer une région de partie prédéfinie de la couche de masque (2) ; préparer une zone d'isolation (3) dans une position correspondant à la région de partie prédéfinie, sur le matériau d'oxyde de gallium (1) à l'aide d'une technique d'oxydation à haute température, la zone d'isolation (3) étant située entre des zones actives du dispositif d'oxyde de gallium ; et retirer la couche de masque restante (2) sur le matériau d'oxyde de gallium (1). La zone d'isolation (3) est préparée à l'aide de la technique d'oxydation à haute température, ce qui empêche un endommagement du dispositif à oxyde de gallium pendant la préparation de la zone d'isolation (3), ce qui permet d'obtenir une isolation entre les zones actives du dispositif à oxyde de gallium.
(ZH)
一种氧化镓器件隔离区(1)的制备方法,包括:在氧化镓材料(1)上淀积掩膜层(2);去除所述掩膜层(2)的预设部分区域;利用高温氧化技术,在所述氧化镓材料(1)上与所述预设部分区域对应的位置制备所述隔离区(3),所述隔离区(3)位于所述氧化镓器件的有源区之间;去除所述氧化镓材料(1)上剩余的掩膜层(2)。通过高温氧化技术制备隔离区(3),避免了隔离区(3)制备过程中对氧化镓器件造成的损伤,实现了氧化镓器件有源区之间的隔离。
Also published as
Latest bibliographic data on file with the International Bureau