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1. WO2020107252 - PIXEL STRUCTURE, DISPLAY APPARATUS, AND METHOD OF FABRICATING PIXEL STRUCTURE

Publication Number WO/2020/107252
Publication Date 04.06.2020
International Application No. PCT/CN2018/117873
International Filing Date 28.11.2018
IPC
H01L 27/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 51/52 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52Details of devices
CPC
H01L 2251/533
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2251Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
50Organic light emitting devices
53Structure
5307specially adapted for controlling the direction of light emission
533End-face emission
H01L 2251/558
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2251Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
50Organic light emitting devices
55characterised by parameters
558Thickness
H01L 27/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
H01L 27/3246
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
3246Pixel defining structures, e.g. banks
H01L 27/3258
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
3258Insulating layers formed between TFT elements and OLED elements
H01L 51/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
Applicants
  • BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
Inventors
  • HUANGFU, Lujiang
  • FAN, Xing
  • LIU, Zheng
  • FAN, Yan
  • LI, Liangjian
Agents
  • TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PIXEL STRUCTURE, DISPLAY APPARATUS, AND METHOD OF FABRICATING PIXEL STRUCTURE
(FR) STRUCTURE DE PIXEL, APPAREIL D'AFFICHAGE, ET PROCÉDÉ DE FABRICATION DE STRUCTURE DE PIXEL
Abstract
(EN)
A pixel structure includes a base substrate(10), an insulating island(21) on the base substrate(10), a light emitting element(50) on a side of the insulating island(21) away from the base substrate(10), an insulating layer(22) on the base substrate(10) and surrounding the insulating island(21), and the insulating layer(22) is spaced apart from the insulating island(21) by a groove(G). A reflective layer(40) on a lateral side of the insulating layer(22) surrounds a periphery of the light emitting element(50), and is configured to reflect light laterally emitted from the light emitting element(50) to exit from a light emitting surface of the pixel structure. The insulating layer(22) has a height relative to a main surface of the base substrate(10) greater than a height of the insulating island(21) relative to the main surface of the base substrate(10).
(FR)
L'invention concerne une structure de pixel comprenant un substrat de base (10), un îlot isolant (21) sur le substrat de base (10), un élément électroluminescent (50) sur un côté de l'îlot isolant (21) à l'opposé du substrat de base (10), une couche isolante (22) sur le substrat de base (10) et entourant l'îlot isolant (21), la couche isolante (22) étant espacée de l'îlot isolant (21) par une rainure (G). Une couche réfléchissante (40) sur un côté latéral de la couche isolante (22) entoure une périphérie de l'élément électroluminescent (50) et elle est configurée pour réfléchir la lumière émise latéralement par l'élément électroluminescent (50) en vue de la faire sortir par une surface d'émission de lumière de la structure de pixel. La couche isolante (22) présente une hauteur par rapport à une surface principale du substrat de base (10) qui est supérieure à une hauteur de l'îlot isolant (21) par rapport à la surface principale du substrat de base (10).
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