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1. WO2020107216 - METHOD OF FABRICATING MICRO LIGHT EMITTING DIODE ARRAY SUBSTRATE, MICRO LIGHT EMITTING DIODE ARRAY SUBSTRATE, MICRO LIGHT EMITTING DIODE DISPLAY APPARATUS

Publication Number WO/2020/107216
Publication Date 04.06.2020
International Application No. PCT/CN2018/117703
International Filing Date 27.11.2018
IPC
H01L 27/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
H01L 27/15
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
H01L 27/156
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
156two-dimensional arrays
H01L 2933/0066
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0066relating to arrangements for conducting electric current to or from the semiconductor body
H01L 33/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants
  • BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
  • HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • CHEN, Peng
  • ZHANG, Xinxia
  • LI, Hengbin
  • WANG, Guolei
Agents
  • TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF FABRICATING MICRO LIGHT EMITTING DIODE ARRAY SUBSTRATE, MICRO LIGHT EMITTING DIODE ARRAY SUBSTRATE, MICRO LIGHT EMITTING DIODE DISPLAY APPARATUS
(FR) PROCÉDÉ DE FABRICATION DE SUBSTRAT DE RÉSEAU DE MICRODIODES ÉLECTROLUMINESCENTES, SUBSTRAT DE RÉSEAU DE MICRODIODES ÉLECTROLUMINESCENTES, APPAREIL D'AFFICHAGE À MICRODIODES ÉLECTROLUMINESCENTES
Abstract
(EN)
A method of fabricating a micro light emitting diode (micro LED) array substrate having a plurality of micro LEDs is provided. The method includes forming a plurality of signal lines on a base substrate (10); depositing a semiconductor material on the base substrate (10) to form a semiconductor material layer; and patterning the semiconductor material layer to form a semiconductor layer (500) of the plurality of micro LEDs. A surface of the plurality of signal lines away from the base substrate (10) is uncovered during depositing the semiconductor material. The plurality of signal lines form a grid for facilitating epitaxial growth of the semiconductor material.
(FR)
L'invention concerne un procédé de fabrication d'un substrat de réseau de microdiodes électroluminescentes (micro-DEL) ayant une pluralité de micro-DEL. Le procédé comprend la formation d'une pluralité de lignes de signal sur un substrat de base (10) ; le dépôt d'un matériau semi-conducteur sur le substrat de base (10) pour former une couche de matériau semi-conducteur ; et la formation de motifs sur la couche de matériau semi-conducteur pour former une couche semi-conductrice (500) de la pluralité de micro-DEL. Une surface de la pluralité de lignes de signal à l'opposé du substrat de base (10) est découverte pendant le dépôt du matériau semi-conducteur. La pluralité de lignes de signal forme une grille pour faciliter la croissance épitaxiale du matériau semi-conducteur.
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