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1. WO2020096817 - DIRECTIONAL DEPOSITION IN ETCH CHAMBER

Publication Number WO/2020/096817
Publication Date 14.05.2020
International Application No. PCT/US2019/058631
International Filing Date 29.10.2019
IPC
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H01L 21/324 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Applicants
  • LAM RESEARCH CORPORATION [US]/[US]
Inventors
  • TAN, Zhongkui
  • XIE, Lisi
  • YAMAGUCHI, Yoko
  • ISHIKAWA, Yasushi
  • PONATH, Patrick
  • JUNG, Sung Jin
  • PARK, Sangjun
  • LEE, Wonchul
  • CHOI, Jayoung
Agents
  • TSAI, Patricia
  • WEAVER, Jeffrey K.
  • AUSTIN, James E.
  • VILLENEUVE, Joseph M.
  • SAMPSON, Roger S.
  • BERGIN, Denise S.
  • GRIFFITH, John F.
  • SCHOLZ, Christian D.
Priority Data
62/755,84605.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) DIRECTIONAL DEPOSITION IN ETCH CHAMBER
(FR) DÉPÔT DIRECTIONNEL DANS UNE CHAMBRE DE GRAVURE
Abstract
(EN)
Methods for forming a vertical growth mask for use in etching applications are described herein. Disclosed embodiments include introducing a tungsten-containing deposition precursor and one or more carrier gases while igniting a plasma to deposit tungsten selectively on field regions of positive features of a patterned etch mask without substantial deposition on sidewalls of the positive features or on an exposed surface of a target layer underlying the patterned etch mask.
(FR)
L'invention concerne des procédés de formation d'un masque de croissance vertical destiné à être utilisé dans des applications de gravure. Des modes de réalisation de l'invention comprennent l'introduction d'un précurseur de dépôt contenant du tungstène et d'un ou de plusieurs gaz porteurs tout en allumant un plasma pour déposer du tungstène sélectivement sur des régions de champ de caractéristiques positives d'un masque de gravure à motifs sans dépôt substantiel sur les parois latérales des caractéristiques positives ou sur une surface exposée d'une couche cible sous-jacente au masque de gravure à motifs.
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