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1. WO2020096808 - METHOD FOR ETCHING AN ETCH LAYER

Publication Number WO/2020/096808
Publication Date 14.05.2020
International Application No. PCT/US2019/058487
International Filing Date 29.10.2019
IPC
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/324 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
Applicants
  • LAM RESEARCH CORPORATION [US]/[US]
Inventors
  • DOLE, Nikhil
  • YANAGAWA, Takumi
Agents
  • LEE, Michael
Priority Data
62/755,70705.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR ETCHING AN ETCH LAYER
(FR) PROCÉDÉ DE GRAVURE D'UNE COUCHE DE GRAVURE
Abstract
(EN)
A method of etching features in a stack comprising a dielectric material on a substrate is provided. In a step (a) an etch plasma is generated from an etch gas, exposing the stack to the etch plasma, and partially etching features in the stack. In a step (b) after step (a) an atomic layer deposition process is provided to deposit a protective film on sidewalls. The atomic layer deposition process comprises a plurality of cycles, wherein each cycle comprises exposing the stack to a first reactant gas comprising WF6, wherein the first reactant gas is adsorbed onto the stack and exposing the stack to a plasma formed from a second reactant gas, wherein the plasma formed from the second reactant gas reacts with the adsorbed first reactant gas to form the protective film over the stack. In a step (c) steps (a)-(b) are repeated at least one time.
(FR)
La présente invention concerne un procédé de gravure d'éléments d'un empilement comprenant un matériau diélectrique sur un substrat. Dans une étape (a), un plasma de gravure est généré à partir d'un gaz de gravure, exposant l'empilement au plasma de gravure et gravant partiellement des éléments dans l'empilement. Dans une étape (b) suivant l'étape (a), un processus de dépôt de couche atomique est réalisé pour déposer un film protecteur sur des parois latérales. Le processus de dépôt de couche atomique comprend une pluralité de cycles, chaque cycle comprenant l'exposition de l'empilement à un premier gaz réactif comprenant du WF6, le premier gaz réactif étant adsorbé sur l'empilement et'exposant l'empilement à un plasma formé à partir d'un second gaz réactif, le plasma formé à partir du second gaz réactif réagissant avec le premier gaz réactif adsorbé pour former le film protecteur sur l'empilement. Dans une étape (c), les étapes (a) à (b) sont répétées au moins une fois.
Also published as
KR1020207006763
KRKR1020207006763
Latest bibliographic data on file with the International Bureau