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1. WO2020096760 - POST CMP CLEANING COMPOSITION

Publication Number WO/2020/096760
Publication Date 14.05.2020
International Application No. PCT/US2019/057280
International Filing Date 21.10.2019
IPC
C11D 3/30 2006.01
CCHEMISTRY; METALLURGY
11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
3Other compounding ingredients of detergent compositions covered in group C11D1/101
16Organic compounds
26containing nitrogen
30Amines; Substituted amines
C11D 3/28 2006.01
CCHEMISTRY; METALLURGY
11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
3Other compounding ingredients of detergent compositions covered in group C11D1/101
16Organic compounds
26containing nitrogen
28Heterocyclic compounds containing nitrogen in the ring
C11D 3/37 2006.01
CCHEMISTRY; METALLURGY
11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
3Other compounding ingredients of detergent compositions covered in group C11D1/101
16Organic compounds
37Polymers
Applicants
  • ENTEGRIS, INC. [US]/[US]
Inventors
  • WHITE, Daniela
  • WHITE, Michael
  • LIU, Jun
  • THOMAS, Elizabeth
Agents
  • AMICI, Robert M.
Priority Data
62/757,36408.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) POST CMP CLEANING COMPOSITION
(FR) COMPOSITION DE NETTOYAGE POST-POLISSAGE CHIMICO-MÉCANIQUE
Abstract
(EN)
The disclosure generally relates to a composition and process for cleaning residue and/or contaminants from microelectronic devices having said residue and contaminants thereon. The residue may include post-CMP, post-etch, and/or post-ash residue. The compositions and methods are particularly advantageous when cleaning a microelectronic surface comprising copper, low-k dielectric materials, and barrier materials comprising at least one of tantalum-containing material, cobalt-containing material, tantalum-containing, tungsten-containing, and ruthenium-containing material.
(FR)
L'invention concerne, de manière générale, une composition et un procédé pour le nettoyage de résidus et/ou de contaminants présents sur des dispositifs microélectroniques présentant lesdits résidus et contaminants à leur surface. Les résidus peuvent comprendre des résidus post-polissage chimico-mécanique, post-gravure et/ou post-polissage au disque toile. Les compositions et les procédés sont particulièrement avantageux lors du nettoyage d'une surface microélectronique comprenant du cuivre, des matériaux diélectriques à faible constante diélectrique et des matériaux barrière comprenant au moins l'un parmi un matériau contenant du tantale, un matériau contenant du cobalt, un matériau contenant du tantale, du tungstène et du ruthénium.
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