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1. WO2020096384 - LIGHT-EMITTING DIODE

Publication Number WO/2020/096384
Publication Date 14.05.2020
International Application No. PCT/KR2019/015090
International Filing Date 07.11.2019
IPC
H01L 33/22 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/58 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
CPC
H01L 27/156
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
156two-dimensional arrays
H01L 2933/0016
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0016relating to electrodes
H01L 2933/0025
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0025relating to coatings
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
H01L 33/0093
H01L 33/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Applicants
  • 서울바이오시스 주식회사 SEOUL VIOSYS CO., LTD. [KR]/[KR]
Inventors
  • 이정훈 LEE, Chung Hoon
Agents
  • 이기성 LEE, Ki Sung
Priority Data
16/672,67604.11.2019US
62/756,93507.11.2018US
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) LIGHT-EMITTING DIODE
(FR) DIODE ÉLECTROLUMINESCENTE
(KO) 발광 소자
Abstract
(EN)
A light-emitting diode is provided. The light-emitting diode comprises: a substrate having a first surface and a second surface opposite to the first surface; a light-emitting structure disposed on the first surface of the substrate; and a first light-blocking film disposed on the second surface of the substrate to expose at least a part of a light-emitting area in which the light-emitting structure is disposed, wherein the second surface of the substrate has a concavo-convex surface at least a part of which overlaps the light-emitting area.
(FR)
La présente invention concerne une diode électroluminescente. La diode électroluminescente comprend : un substrat ayant une première surface et une seconde surface opposée à la première surface ; une structure électroluminescente disposée sur la première surface du substrat ; et un premier film bloquant la lumière disposé sur la seconde surface du substrat pour exposer au moins une partie d’une zone électroluminescente dans laquelle est disposée la structure électroluminescente, la seconde surface du substrat ayant une surface concavo-convexe dont au moins une partie recouvre partiellement la zone électroluminescente.
(KO)
발광 소자를 제공한다. 발광 소자는, 제1 면 및 상기 제1 면에 대향하는 제2 면을 갖는 기판, 기판의 제1 면 상에 배치되는 발광 구조물, 및 기판의 제2 면 상에, 발광 구조물이 배치된 발광 영역의 적어도 일부를 노출시키는 제1 광 차단막을 포함하되, 기판의 제2 면은 발광 영역과 적어도 일부가 중첩되는 요철면을 갖는다.
Also published as
Latest bibliographic data on file with the International Bureau