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1. WO2020096291 - PLASMA ETCHING METHOD USING FARADAY BOX

Publication Number WO/2020/096291
Publication Date 14.05.2020
International Application No. PCT/KR2019/014784
International Filing Date 04.11.2019
IPC
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
H01L 21/3213 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321After-treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
Applicants
  • 주식회사 엘지화학 LG CHEM, LTD. [KR]/[KR]
Inventors
  • 허은규 HER, Eun Kyu
  • 박정호 PARK, Jeong Ho
  • 박성민 PARK, Seong Min
  • 한상철 HAN, Sang Choll
  • 신부건 SHIN, Bu Gon
Agents
  • 특허법인 피씨알 PCR INTELLECTUAL PROPERTY LAW FIRM
Priority Data
10-2018-013754709.11.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) PLASMA ETCHING METHOD USING FARADAY BOX
(FR) PROCÉDÉ DE GRAVURE AU PLASMA FAISANT APPEL À UNE BOÎTE DE FARADAY
(KO) 파라데이 상자를 이용한 플라즈마 식각 방법
Abstract
(EN)
The present invention provides a plasma etching method using a Faraday box, by which a pattern part having a blazing shape can be effectively produced. The plasma etching method using a Faraday box comprises the steps of: forming a first pattern part on a partial region of one surface of an etching substrate exposed through a metal mask by performing first plasma etching on the one surface of the etching substrate; and removing the metal mask, positioning the one surface of the etching substrate in a Faraday box including a mesh part formed at the upper surface thereof while the one surface of the etching substrate is inclined with respect to the bottom surface of the Faraday box, and performing second plasma etching, so as to make the first pattern part into a second pattern part having a blazing shape.
(FR)
La présente invention concerne un procédé de gravure au plasma faisant appel à une boîte de Faraday, permettant de produire efficacement une partie motif présentant une forme de marquage. Le procédé de gravure au plasma faisant appel à une boîte de Faraday comprend les étapes consistant : à former une première partie motif sur une région partielle d'une première surface d'un substrat de gravure apparent à travers un masque métallique par la réalisation d'une première gravure au plasma sur la première surface du substrat de gravure ; et à retirer le masque métallique, à positionner la première surface du substrat de gravure dans une boîte de Faraday comprenant une partie tamis formée au niveau de sa surface supérieure, la première surface du substrat de gravure étant inclinée par rapport à la surface inférieure de la boîte de Faraday, et à réaliser une seconde gravure au plasma, de manière à faire de la première partie motif une seconde partie motif présentant une forme de marquage.
(KO)
본 발명은 블레이징 형상을 가지는 패턴부를 효과적으로 제조할 수 있는 파라데이 상자를 이용한 플라즈마 식각 방법을 제공한다. 상기 파라데이 상자를 이용한 플라즈마 식각 방법은 식각용 기재의 일면에 1차 플라즈마 식각을 수행하여 금속 마스크를 통해 노출된 식각용 기재 일면의 일부 영역 상에 제1 패턴부를 형성하는 단계; 금속 마스크를 제거하고, 식각용 기재의 일면을 메쉬부가 상면에 구비된 파라데이 상자 내에서 파라데이 상자의 바닥면에 경사지게 위치시키고, 2차 플라즈마 식각을 수행하여 제1 패턴부를 블레이징 형상을 가지는 제2 패턴부로 형성하는 단계;를 포함한다.
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