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1. WO2020096279 - METHOD FOR QUANTITATIVELY ANALYZING CRYSTALLINE FRACTION IN AMORPHOUS OXIDE SEMICONDUCTOR LAYER

Publication Number WO/2020/096279
Publication Date 14.05.2020
International Application No. PCT/KR2019/014670
International Filing Date 01.11.2019
IPC
G01N 21/47 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
47Scattering, i.e. diffuse reflection
G01N 21/17 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
17Systems in which incident light is modified in accordance with the properties of the material investigated
C01G 15/00 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
15Compounds of gallium, indium, or thallium
Applicants
  • 주식회사 엘지화학 LG CHEM, LTD. [KR]/[KR]
Inventors
  • 서주형 SUH, Juhyung
Agents
  • 김애라 KIM, Aera
Priority Data
10-2018-013696509.11.2018KR
10-2019-013798831.10.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) METHOD FOR QUANTITATIVELY ANALYZING CRYSTALLINE FRACTION IN AMORPHOUS OXIDE SEMICONDUCTOR LAYER
(FR) PROCÉDÉ D'ANALYSE QUANTITATIVE D'UNE FRACTION CRISTALLINE DANS UNE COUCHE SEMI-CONDUCTRICE D'OXYDE AMORPHE
(KO) 비정질 산화물 반도체층 내의 결정 분율의 정량분석방법
Abstract
(EN)
The present invention provides a method for quantitatively analyzing a crystalline fraction in an amorphous oxide semiconductor layer, comprising the steps of: (a) selecting, from a transmission electron microscopy (TEM) diffraction pattern image of an amorphous oxide semiconductor layer, only a diffraction pattern of a crystalline area present in a diffraction pattern of an amorphous area by using an aperture of an objective lens to acquire an image of crystal distribution in the amorphous layer; and (b) converting the crystal distribution of the image acquired in (a) above into a binary photograph and then subjecting the same to image processing to quantify a crystalline fraction in the amorphous layer.
(FR)
La présente invention concerne un procédé d'analyse quantitative d'une fraction cristalline présente dans une couche semi-conductrice d'oxyde amorphe, comprenant les étapes consistant à : (a) sélectionner, à partir d'une image de motifs de diffraction obtenue par microscopie électronique en transmission (TEM) d'une couche semi-conductrice d'oxyde amorphe, uniquement un motif de diffraction d'une zone cristalline présente dans un motif de diffraction d'une zone amorphe en utilisant l'ouverture d'une lentille de focalisation adaptée pour acquérir une image de la distribution des cristaux dans la couche amorphe ; et (b) convertir la distribution des cristaux de l'image acquise au point (a) ci-dessus en une photographie binaire, puis soumettre celle-ci à un traitement d'image pour quantifier la fraction cristalline présente dans la couche amorphe.
(KO)
본 발명은 (a) 비정질 산화물 반도체층의 투과전자현미경(TEM) 회절 패턴 영상에서 비정질 영역의 회절 패턴에 존재하는 결정 영역의 회절 패턴만 대물렌즈 조리개의 개구부(aperture)로 선택하여 비정질층 내 결정 분포 영상을 얻는 단계; 및 (b) 상기 (a)로부터 얻은 영상의 결정 분포를 바이너리 사진으로 변환한 후 영상 처리(image processing)하여 상기 비정질층 내 결정 분율을 정량화하는 단계를 포함하는 비정질 산화물 반도체층 내의 결정 분율의 정량분석방법을 제공한다.
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