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1. WO2020096150 - LIGHT EMITTING DEVICE STRUCTURE AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2020/096150
Publication Date 14.05.2020
International Application No. PCT/KR2019/006327
International Filing Date 27.05.2019
IPC
H01L 27/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/14 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/38 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/62 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/16 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants
  • 삼성디스플레이 주식회사 SAMSUNG DISPLAY CO., LTD. [KR]/[KR]
Inventors
  • 조현민 CHO, Hyun Min
  • 민정홍 MIN, Jung Hong
  • 김대현 KIM, Dae Hyun
  • 김동욱 KIM, Dong Uk
Agents
  • 특허법인 가산 KASAN IP & LAW FIRM
Priority Data
10-2018-013506706.11.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) LIGHT EMITTING DEVICE STRUCTURE AND METHOD FOR MANUFACTURING SAME
(FR) STRUCTURE DE DISPOSITIF ÉLECTROLUMINESCENT ET SON PROCÉDÉ DE FABRICATION
(KO) 발광 소자 구조물 및 이의 제조방법
Abstract
(EN)
A light emitting device structure and a method for manufacturing same are provided. The light emitting device structure may comprise: a substrate; one or more light emitting devices disposed on the substrate, being spaced apart from each other, and having a form extending in a direction perpendicular to the substrate; an auxiliary layer disposed on the substrate to expose at least a portion of the upper surface of the substrate, and surrounding the outer surface of the light emitting device; a current spreading layer disposed on the auxiliary layer and contacting with one end of the light emitting device; a first pad electrically connected to the one end of the light emitting device and disposed on the current spreading layer so as not to overlap with the light emitting device; and a second pad electrically connected to the other end of the light emitting device, and disposed on the upper surface of the exposed substrate, being spaced apart from the auxiliary layer.
(FR)
La présente invention concerne une structure de dispositif électroluminescent et son procédé de fabrication. La structure de dispositif électroluminescent peut comprendre : un substrat; un ou plusieurs dispositifs électroluminescents disposés sur le substrat, espacés les uns des autres, et ayant une forme s'étendant dans une direction perpendiculaire au substrat; une couche auxiliaire disposée sur le substrat de façon à exposer au moins une partie de la surface supérieure du substrat, et entourant la surface extérieure du dispositif électroluminescent; une couche d'étalement de courant disposée sur la couche auxiliaire et venant en contact avec une extrémité du dispositif électroluminescent; un premier plot connecté électriquement à une extrémité du dispositif électroluminescent et disposé sur la couche d'étalement de courant de façon à ne pas chevaucher le dispositif électroluminescent; et un second plot connecté électriquement à l'autre extrémité du dispositif électroluminescent, et disposé sur la surface supérieure du substrat exposé, espacé de la couche auxiliaire.
(KO)
발광 소자 구조물 및 이의 제조방법이 제공된다. 발광 소자 구조물은 기판, 상기 기판 상에 서로 이격되어 배치되고, 상기 기판에 수직한 방향으로 연장된 형태를 갖는 적어도 하나의 발광 소자, 상기 기판 상에 배치되되 상기 기판의 상면 중 적어도 일부를 노출시키고, 상기 발광 소자의 외면을 둘러싸는 보조층, 상기 보조층 상에 배치되고 상기 발광 소자의 일 단부와 접촉하는 전류 분산층, 상기 발광 소자의 상기 일 단부와 전기적으로 연결되고, 상기 전류 분산층 상에 상기 발광 소자와 중첩되지 않도록 배치된 제1 패드 및 상기 발광 소자의 타 단부와 전기적으로 연결되고, 상기 노출된 기판의 상면에 상기 보조층과 이격되어 배치된 제2 패드를 포함할 수 있다.
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