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1. WO2020096140 - INTERNAL MATCHING TYPE HIGH POWER AMPLIFIER

Publication Number WO/2020/096140
Publication Date 14.05.2020
International Application No. PCT/KR2019/002043
International Filing Date 20.02.2019
IPC
H03F 1/56 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
56Modifications of input or output impedances, not otherwise provided for
H03F 3/60 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
CPC
H03F 1/56
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
56Modifications of input or output impedances, not otherwise provided for
H03F 2200/447
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
447the amplifier being protected to temperature influence
H03F 3/60
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
60Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
Applicants
  • 임병옥 LIM, Byeong Ok [KR]/[KR]
Inventors
  • 임병옥 LIM, Byeong Ok
Agents
  • 윤희식 YOON, Hee Sik
Priority Data
10-2018-013714409.11.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) INTERNAL MATCHING TYPE HIGH POWER AMPLIFIER
(FR) AMPLIFICATEUR HAUTE PUISSANCE DE TYPE À ADAPTATION INTERNE
(KO) 내부 정합형 고출력 증폭기
Abstract
(EN)
The present invention relates to an internal matching type high power amplifier, comprising: a heat sink in which a transistor and a plurality of matching circuits connected by wire bonding to form a package are bonded in parallel; an upper substrate disposed on the top of the heat sink, having a bias circuit and a plurality of capacitors mounted thereon, and an embedded section, in which the transistor and the plurality of matching circuits are buried, disposed on the bottom; an RF input stage and an RF output stage which are patterned to be connected to the bias circuit; and a lid which is disposed on the inner surface of the embedded section and protects the transistor and the plurality of matching circuits.
(FR)
La présente invention concerne un amplificateur de haute puissance de type à adaptation interne, comprenant : un dissipateur thermique dans lequel un transistor et une pluralité de circuits d'adaptation connectés par connexion de câbles pour former un boîtier sont connectés en parallèle ; un substrat supérieur disposé sur la partie supérieure du dissipateur thermique, ayant un circuit de polarisation et une pluralité de condensateurs montés sur celui-ci, et une section intégrée, dans laquelle le transistor et la pluralité de circuits d'adaptation sont enfouis, disposés sur le fond ; un étage d'entrée RF et un étage de sortie RF qui sont configurés pour être connectés au circuit de polarisation ; et un couvercle qui est disposé sur la surface interne de la section intégrée et protège le transistor et la pluralité de circuits d'adaptation.
(KO)
본 발명은 내부 정합형 고출력 증폭기에 관한 것으로, 패키지를 이루도록 와이어 본딩으로 연결되는 트랜지스터(Transistor)와 복수의 정합 회로부(Matching Circuit)가 병렬로 접합 구성되는 히트싱크; 상기 히트싱크의 상부에 구성되며, 바이어스 회로부와 다수개의 캐패시터가 실장되고, 하부에 상기 트랜지스터 및 복수의 정합 회로부가 매립되는 매립부가 구성되는 상부기판; 상기 바이어스 회로부와 접속되도록 패터닝되는 RF 입력단 및 RF 출력단; 및 상기 매립부의 내면에 구성되며, 상기 트랜지스터 및 복수의 접합 회로부를 보호하는 리드(Lid);를 포함하는 것을 특징으로 한다.
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