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1. WO2020095924 - JOINED BODY CONSTITUTED OF PIEZOELECTRIC MATERIAL SUBSTRATE AND SUPPORT SUBSTRATE, METHOD OF MANUFACTURING SAME, AND ELASTIC WAVE ELEMENT

Publication Number WO/2020/095924
Publication Date 14.05.2020
International Application No. PCT/JP2019/043392
International Filing Date 06.11.2019
IPC
H03H 3/08 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
08for the manufacture of resonators or networks using surface acoustic waves
H03H 9/25 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25Constructional features of resonators using surface acoustic waves
H01L 41/187 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive elements
187Ceramic compositions
Applicants
  • 日本碍子株式会社 NGK INSULATORS, LTD. [JP]/[JP]
Inventors
  • 堀 裕二 HORI Yuji
  • 山寺 喬紘 YAMADERA Takahiro
Agents
  • 細田 益稔 HOSODA Masutoshi
  • 青木 純雄 AOKI Sumio
Priority Data
2018-21133809.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) JOINED BODY CONSTITUTED OF PIEZOELECTRIC MATERIAL SUBSTRATE AND SUPPORT SUBSTRATE, METHOD OF MANUFACTURING SAME, AND ELASTIC WAVE ELEMENT
(FR) CORPS ASSEMBLÉ DE SUBSTRAT DE MATÉRIAU PIÉZOÉLECTRIQUE ET SUBSTRAT DE SUPPORT, SON PROCÉDÉ DE FABRICATION ET ÉLÉMENT D'ONDE ACOUSTIQUE
(JA) 圧電性材料基板と支持基板との接合体、その製造方法および弾性波素子
Abstract
(EN)
[Problem] To prevent the breakage and cracking of a joined body obtained by joining a piezoelectric material substrate and a silicon substrate via a joining layer comprising silicon oxide, while also improving the effective resistivity thereof over a wide frequency range. [Solution] A silicon film 2 is provided on a silicon support substrate 1 by sputtering. The silicon film 2 is heat-treated at a temperature of 400°C to 600°C to form an intermediate layer 3. A piezoelectric material substrate is joined to the support substrate 1 via the intermediate layer 3 and a joining layer comprising silicon oxide.
(FR)
Le problème décrit par la présente invention est d'empêcher la rupture et la fissuration d'un corps assemblé obtenu en joignant un substrat de matériau piézoélectrique et un substrat de silicium par l'intermédiaire d'une couche de jonction comprenant de l'oxyde de silicium, tout en améliorant également sa résistivité efficace sur une large plage de fréquences. La solution selon l'invention porte sur un film de silicium 2 qui est disposé sur un substrat de support 1 en silicium par pulvérisation. Le film de silicium 2 est traité thermiquement à une température de 400 °C à 600 °C pour former une couche intermédiaire 3. Un substrat de matériau piézoélectrique est relié au substrat de support 1 par l'intermédiaire de la couche intermédiaire 3 et d'une couche de jonction comprenant de l'oxyde de silicium.
(JA)
【課題】圧電性材料基板とシリコン基板とを、酸化珪素からなる接合層を介して接合するのに際して、接合体の破損やクラックを防止しつつ、広い周波数範囲で接合体の実効抵抗率を向上させる。 【解決手段】シリコンからなる支持基板1上にスパッタリング法によってシリコン膜2を設ける。シリコン膜2を400℃以上、600℃以下の温度で熱処理することで中間層3を生成させる。圧電性材料基板を、酸化珪素からなる接合層および中間層3を介して支持基板1に対して接合する。
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