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1. WO2020095840 - SEMICONDUCTOR LIGHT EMITTING ELEMENT

Publication Number WO/2020/095840
Publication Date 14.05.2020
International Application No. PCT/JP2019/043056
International Filing Date 01.11.2019
IPC
H01L 33/08 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
08with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/22 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/32 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
Applicants
  • 学校法人 名城大学 MEIJO UNIVERSITY [JP]/[JP]
  • 豊田合成株式会社 TOYODA GOSEI CO., LTD. [JP]/[JP]
  • 株式会社小糸製作所 KOITO MANUFACTURING CO., LTD. [JP]/[JP]
Inventors
  • 上山 智 KAMIYAMA Satoshi
  • 寺澤 美月 TERAZAWA Mizuki
  • 竹内 哲也 TAKEUCHI Tetsuya
  • 岩谷 素顕 IWAYA Motoaki
  • 赤▲崎▼ 勇 AKASAKI Isamu
  • 大矢 昌輝 OYA Masaki
  • 飯田 一喜 IIDA Kazuyoshi
  • 曽根 直樹 SONE Naoki
Agents
  • 藤谷 修 FUJITANI Osamu
  • 一色 昭則 ISSHIKI Akinori
  • 角谷 智広 KADOYA Tomohiro
Priority Data
2018-21159009.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR LIGHT EMITTING ELEMENT
(FR) ÉLÉMENT ÉLECTROLUMINESCENT À SEMI-CONDUCTEUR
(JA) 半導体発光素子
Abstract
(EN)
[Problem] The technical problem is to provide a semiconductor light emitting element that improves the light extraction efficiency of the semiconductor light emitting element that has an active layer with a 3 dimensional fine structure. [Solution] This semiconductor light emitting element 100 has: a substrate 110; a plurality of columnar semiconductors 130 on the substrate 110; a burying layer 140 that buries the gap between the plurality of columnar semiconductors 130; and a light extraction surface S1. The light extraction surface S1 has a plurality of convex parts D1. The plurality of columnar semiconductors 130 have a hexagonal columnar shape and are also placed at a first pitch interval J1. The plurality of convex parts D1 are placed at a second pitch interval J2. The first pitch interval J1 and the second pitch interval J2 are different.
(FR)
Le problème technique est de proposer un élément électroluminescent à semi-conducteur qui améliore l'efficacité d'extraction de lumière de l'élément électroluminescent à semi-conducteur qui a une couche active ayant une structure fine tridimensionnelle. La solution selon l'invention porte sur un élément électroluminescent à semi-conducteur 100 qui comprend : un substrat 110 ; une pluralité de semi-conducteurs en colonne 130 sur le substrat 110 ; une couche d'enfouissement 140 qui enfouit l'espace entre la pluralité de semi-conducteurs en colonne 130 ; et une surface d'extraction de lumière S1. La surface d'extraction de lumière S1 présente une pluralité de parties convexes D1. La pluralité de semi-conducteurs en colonne 130 ont une forme en colonne hexagonale et sont également placés au niveau d'un premier intervalle de pas J1. La pluralité de parties convexes D1 sont placées au niveau d'un second intervalle de pas J2. Le premier intervalle de pas J1 et le second intervalle de pas J2 sont différents.
(JA)
【課題】 技術的課題は、3次元的な微細構造の活性層を有する半導体発光素子の光取り出し効率を向上させることを図った半導体発光素子を提供することである。 【解決手段】 半導体発光素子100は、基板110と、基板110の上の複数の柱状半導体130と、複数の柱状半導体130の間の隙間を埋める埋込層140と、光取り出し面S1と、を有する。光取り出し面S1は、複数の凸形状部D1を有する。複数の柱状半導体130は、六角柱形状をしているとともに、第1のピッチ間隔J1で配置されている。複数の凸形状部D1は、第2のピッチ間隔J2で配置されている。第1のピッチ間隔J1と第2のピッチ間隔J2とは異なっている。
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