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1. WO2020095787 - FILM FORMING METHOD AND SEMICONDUCTOR PRODUCTION APPARATUS

Publication Number WO/2020/095787
Publication Date 14.05.2020
International Application No. PCT/JP2019/042540
International Filing Date 30.10.2019
IPC
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H01L 21/318 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
318composed of nitrides
C23C 16/04 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
04Coating on selected surface areas, e.g. using masks
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 鈴木 悠介 SUZUKI, Yusuke
  • 守屋 剛 MORIYA, Tsuyoshi
  • 長谷部 一秀 HASEBE, Kazuhide
  • 遠藤 篤史 ENDO, Atsushi
  • 田中 諭志 TANAKA, Satoshi
Agents
  • 伊東 忠重 ITOH, Tadashige
  • 伊東 忠彦 ITOH, Tadahiko
Priority Data
2018-21006507.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) FILM FORMING METHOD AND SEMICONDUCTOR PRODUCTION APPARATUS
(FR) PROCÉDÉ DE FORMATION DE FILM ET APPAREIL DE PRODUCTION À SEMI-CONDUCTEURS
(JA) 成膜方法及び半導体製造装置
Abstract
(EN)
The present invention provides a film forming method which comprises: a step for preparing a mask suited to the measurement result of the surface state of a substrate; a step for carrying the mask in a process chamber; a step for carrying the substrate in the process chamber; and a step for forming a film on the back surface of the substrate, while having the mask arranged in the back surface of the substrate.
(FR)
La présente invention concerne un procédé de formation de film qui comprend : une étape consistant à préparer un masque approprié au résultat de mesure de l'état de surface d'un substrat ; une étape consistant à transporter le masque dans une chambre de traitement ; une étape consistant à transporter le substrat dans la chambre de traitement ; et une étape consistant à former un film sur la surface arrière du substrat, tout en ayant le masque disposé dans la surface arrière du substrat.
(JA)
基板の表面状態の測定結果に応じたマスクを準備する工程と、前記マスクを処理容器内に搬入する工程と、前記基板を前記処理容器内に搬入する工程と、前記基板の裏面に前記マスクを配置した状態で前記基板の裏面を成膜する工程と、を有する成膜方法が提供される。
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