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1. WO2020095753 - MAGNETORESISTIVE ELEMENT

Publication Number WO/2020/095753
Publication Date 14.05.2020
International Application No. PCT/JP2019/042295
International Filing Date 29.10.2019
IPC
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H01L 21/8239 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
H01L 27/105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 植木 誠 UEKI Makoto
  • 末光 克巳 SUEMITSU Katsumi
Agents
  • 山本 孝久 YAMAMOTO Takahisa
  • 吉井 正明 YOSHII Masaaki
Priority Data
2018-20876006.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MAGNETORESISTIVE ELEMENT
(FR) ÉLÉMENT MAGNÉTORÉSISTIF
(JA) 磁気抵抗素子
Abstract
(EN)
This magnetoresistive element has a layered structure 50 that includes at least a fixed magnetic layer, an intermediate layer, and a storage layer, wherein the layered structure 50 has a metal layer 61 formed thereon or thereabove, an orthographic image of the layered structure 50 relative to the metal layer 61 is included in the metal layer 61, and EGib-0(T)<EGib-1(T) and/or EGib-2(T)≤EGib-0(T) is satisfied where EGib-0(T) is the Gibbs energy of formation of oxides of metal atoms that compose the metal layer 61 at a temperature T(°C) of 0 to 40°C, EGib-1(T) is the smallest Gibbs energy for the Gibbs energy of formation of oxides of metal atoms that compose the fixed magnetic layer and the storage layer at temperature T, and EGib-2(T) is the largest Gibbs energy for the Gibbs energy of formation of oxides of metal atoms that compose the intermediate layer.
(FR)
Le présent élément magnétorésistif a une structure en couches 50 qui comprend au moins une couche magnétique fixe, une couche intermédiaire, et une couche de stockage, la structure en couches 50 ayant une couche métallique 61 formée sur celle-ci ou au-dessus de celle-ci, une image orthographique de la structure en couches 50 par rapport à la couche métallique 61 est incluse dans la couche métallique 61, et EGib-0(T)<EGib-1(T) et/ou EGib-2(T)≤EGib-0(T) est satisfaite lorsque EGib-0(T) est l'énergie Gibbs de la formation d'oxydes d'atomes métalliques qui composent la couche métallique 61 à une température T(°C) de 0 à 40 °C, EGib-1(T) est la plus petite énergie Gibbs pour l'énergie Gibbs de formation d'oxydes d'atomes métalliques qui composent la couche magnétique fixe et la couche de stockage à la température T, et EGib-2(T) est la plus grande énergie Gibbs pour l'énergie Gibbs de formation d'oxydes d'atomes métalliques qui composent la couche intermédiaire.
(JA)
本開示の磁気抵抗素子は、少なくとも、磁化固定層、中間層及び記憶層から成る積層構造体50を有しており、積層構造体50の上又は上方には金属層61が形成されており、金属層61に対する積層構造体50の正射影像は金属層61に含まれており、0゜C以上、400゜C以下の温度T(゜C)における金属層61を構成する金属原子の酸化物・生成ギブスエネルギーをEGib-0(T)、温度Tにおける磁化固定層及び記憶層を構成する金属原子の酸化物・生成ギブスエネルギーの内、最小のギブスエネルギーをEGib-1(T)、中間層を構成する金属原子の酸化物・生成ギブスエネルギーの内、最大のギブスエネルギーをEGib-2(T)としたとき、EGib-0(T)<EGib-1(T)、及び/又は、EGib-2(T)≦EGib-0(T)を満足する。
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