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1. WO2020095598 - SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

Publication Number WO/2020/095598
Publication Date 14.05.2020
International Application No. PCT/JP2019/039520
International Filing Date 07.10.2019
IPC
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
Applicants
  • 株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP]/[JP]
Inventors
  • 加藤 雅彦 KATO, Masahiko
Agents
  • 松阪 正弘 MATSUSAKA, Masahiro
  • 田中 勉 TANAKA, Tsutomu
  • 井田 正道 IDA, Masamichi
Priority Data
2018-20965607.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
(FR) PROCÉDÉ DE TRAITEMENT DE SUBSTRAT ET DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理方法および基板処理装置
Abstract
(EN)
A nozzle moving mechanism of this substrate processing device is capable of moving a nozzle portion (31) in proximity to and along an upper surface (91) of a substrate (9) on the radially inner side of an outermost position opposite to an outer peripheral portion (93) of the upper surface (91). Substrate processing includes performing a first ejecting operation in which a processing fluid is ejected from the nozzle portion (31) onto the upper surface (91) while moving the nozzle portion (31) along the upper surface (91) of the substrate (9) being rotated, and a second ejecting operation in which the processing fluid is ejected from the nozzle portion (31) stopped in the outermost position onto the upper surface (91) of the substrate (9) being rotated. The rotating speed of the substrate (9) during the second ejecting operation is higher than a rotating speed during the first ejecting operation, and/or the flow volume of ejection of the processing fluid during the second ejecting operation is smaller than a flow volume of ejection during the first ejecting operation. This makes it possible to limit the area in which additional processing is performed using the processing fluid with respect to the outer peripheral portion (93).
(FR)
L'invention porte sur un dispositif de traitement de substrat comprenant un mécanisme de déplacement de buse qui permet de déplacer une partie de buse (31) à proximité et le long d'une surface supérieure (91) d'un substrat (9) sur le côté radialement interne de la position située le plus à l'extérieur à l'opposé d'une partie périphérique externe (93) de la surface supérieure (91). Le traitement de substrat comprend la réalisation d'une première opération d'éjection au cours de laquelle un fluide de traitement est éjecté de la partie de buse (31) sur la surface supérieure (91) tout en déplaçant la partie de buse (31) le long de la surface supérieure (91) du substrat (9) mis en rotation, et d'une seconde opération d'éjection au cours de laquelle le fluide de traitement est éjecté de la partie de buse (31) arrêtée dans la position située le plus à l'extérieur sur la surface supérieure (91) du substrat (9) mis en rotation. La vitesse de rotation du substrat (9) pendant la seconde opération d'éjection est supérieure à une vitesse de rotation pendant la première opération d'éjection, et/ou le volume d'éjection du fluide de traitement pendant la seconde opération d'éjection est inférieur à un volume d'éjection d'écoulement pendant la première opération d'éjection. Ceci permet de limiter la zone dans laquelle un traitement supplémentaire est effectué à l'aide du fluide de traitement par rapport à la partie périphérique externe (93).
(JA)
基板処理装置のノズル移動機構は、基板(9)の上面(91)の外周縁部(93)に対向する最外位置から径方向の内側において、ノズル部(31)を上面(91)に近接させつつ上面(91)に沿って移動可能である。基板処理では、回転する基板(9)の上面(91)に沿ってノズル部(31)を移動しつつ、上面(91)に対してノズル部(31)から処理液を吐出する第1吐出動作と、回転する基板(9)の上面(91)に対して、最外位置で停止したノズル部(31)から処理液を吐出する第2吐出動作とが行われる。第2吐出動作における基板(9)の回転速度が、第1吐出動作における回転速度よりも高い、または/および、第2吐出動作における処理液の吐出流量が、第1吐出動作における吐出流量よりも低い。これにより、処理液による外周縁部(93)に対する追加の処理を狭い範囲に限定して行うことができる。
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