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1. WO2020095510 - BI-DIRECTIONAL SWITCH, ELECTRIC DEVICE, AND MULTI-LEVEL INVERTER

Publication Number WO/2020/095510
Publication Date 14.05.2020
International Application No. PCT/JP2019/032985
International Filing Date 23.08.2019
IPC
H01L 21/337 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
337with a PN junction gate
H01L 21/338 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
338with a Schottky gate
H01L 21/822 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
H01L 27/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
H01L 29/778 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/808 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
80with field effect produced by a PN or other rectifying junction gate
808with a PN junction gate
CPC
H01L 21/822
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
H01L 27/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
H01L 29/778
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT ; ; with two-dimensional charge-carrier layer formed at a heterojunction interface
H01L 29/808
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
80with field effect produced by a PN or other rectifying junction gate ; , i.e. potential-jump barrier
808with a PN junction gate ; , e.g. PN homojunction gate
H01L 29/812
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
80with field effect produced by a PN or other rectifying junction gate ; , i.e. potential-jump barrier
812with a Schottky gate
Applicants
  • パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP]/[JP]
Inventors
  • 木下 雄介 KINOSHITA, Yusuke
  • 山田 康博 YAMADA, Yasuhiro
  • 一柳 貴志 ICHIRYU, Takashi
  • 野村 雅則 NOMURA, Masanori
  • 石田 秀俊 ISHIDA, Hidetoshi
Agents
  • 特許業務法人北斗特許事務所 HOKUTO PATENT ATTORNEYS OFFICE
Priority Data
2018-21072408.11.2018JP
2019-01644031.01.2019JP
2019-07957218.04.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) BI-DIRECTIONAL SWITCH, ELECTRIC DEVICE, AND MULTI-LEVEL INVERTER
(FR) COMMUTATEUR BIDIRECTIONNEL, DISPOSITIF ÉLECTRIQUE ET ONDULEUR MULTINIVEAU
(JA) 双方向スイッチ、電気装置及びマルチレベルインバータ
Abstract
(EN)
The purpose of the present disclosure is to suppress current collapse. A substrate (2) has electrical conductivity. A GaN layer (4) is formed on the substrate (2). An AlGaN layer (5) is formed on the GaN layer (4). A first source electrode (S1), a first gate electrode (G1), a second gate electrode (G2), and a second source electrode (S2) are formed on the AlGaN layer (5). A first p-type Alx1Ga1-x1N layer (61) (herein, 0≦x1<1) is interposed between the first gate electrode (G1) and the AlGaN layer (5). A second p-type Alx2Ga1-x2N layer (62) (herein, 0≦x2<1) is interposed between the second gate electrode (G2) and the AlGaN layer (5). The substrate (2) is electrically insulated with respect to all of the first source electrode (S1), the second source electrode (S2), the first gate electrode (G1), and the second gate electrode (G2). A bi-directional switch (1) is further provided with a terminal (8) for connecting the substrate (2) to a constant potential point. The terminal (8) is connected to the substrate (2).
(FR)
L'objectif de la présente invention est de supprimer un affaissement de courant. Un substrat (2) présente une conductibilité électrique. Une couche de GaN (4) est formée sur le substrat (2). Une couche d'AlGaN (5) est formée sur la couche de GaN (4). Une première électrode de source (S1), une première électrode de grille (G1), une seconde électrode de grille (G2) et une seconde électrode de source (S2) sont formées sur la couche d'AlGaN (5). Une première couche d'Alx1Ga1-x1N de type p (61) (ici, 0≦x1<1) est interposée entre la première électrode de grille (G1) et la couche d'AlGaN (5). Une seconde couche d'Alx2Ga1-x2N de type p (62) (ici, 0≦x2<1) est interposée entre la seconde électrode de grille (G2) et la couche d'AlGaN (5). Le substrat (2) est électriquement isolé par rapport à la totalité de la première électrode de source (S1), de la seconde électrode de source (S2), de la première électrode de grille (G1) et de la seconde électrode de grille (G2). Un commutateur bidirectionnel (1) est en outre pourvu d'une borne (8) pour connecter le substrat (2) à un point de potentiel constant. La borne (8) est connectée au substrat (2).
(JA)
本開示の課題は、電流コラプスを抑制することである。基板(2)は、導電性を有する。GaN層(4)は、基板(2)上に形成されている。AlGaN層(5)は、GaN層(4)上に形成されている。第1のソース電極(S1)、第1のゲート電極(G1)、第2のゲート電極(G2)、及び第2のソース電極(S2)は、AlGaN層(5)上に形成されている。第1のp型Alx1Ga1-x1N層(61)(ここで、0≦x1<1)は、第1のゲート電極(G1)とAlGaN層(5)との間に介在している。第2のp型Alx2Ga1-x2N層(62)(ここで、0≦x2<1)は、第2のゲート電極(G2)とAlGaN層(5)との間に介在している。基板(2)は、第1のソース電極(S1)、第2のソース電極(S2)、第1のゲート電極(G1)及び第2のゲート電極(G2)の全てに対して電気的に絶縁されている。双方向スイッチ(1)は、基板(2)を定電位点に接続するための端子(8)を更に備える。端子(8)は、基板(2)に接続されている。
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