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1. WO2020095179 - OPTOELECTRONIC SEMICONDUCTOR DEVICE

Publication Number WO/2020/095179
Publication Date 14.05.2020
International Application No. PCT/IB2019/059453
International Filing Date 04.11.2019
IPC
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/02 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
H01L 33/16 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 33/32 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01L 33/42 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
42Transparent materials
H01L 33/18 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
18within the light emitting region
CPC
H01L 2933/0016
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0016relating to electrodes
H01L 2933/0066
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0066relating to arrangements for conducting electric current to or from the semiconductor body
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
H01L 33/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
H01L 33/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 33/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
18within the light emitting region
Applicants
  • KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY [SA]/[SA]
Inventors
  • OOI, Boon S.
  • PRABASWARA, Aditya
  • MIN, Jung-Wook
  • NG, Tien Khee
Priority Data
62/755,65905.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) OPTOELECTRONIC SEMICONDUCTOR DEVICE
(FR) DISPOSITIF SEMI-CONDUCTEUR OPTOÉLECTRONIQUE
Abstract
(EN)
A method of forming an optoelectronic semiconductor device involves providing (105) an amorphous substrate. A transparent and conductive oxide layer is deposited (110) on the amorphous substrate. The transparent and conductive oxide layer is annealed (115) to form an annealed transparent and conductive oxide layer having a cubic-oriented and/or rhombohedral-oriented surface. A nanorod array is formed (120) on the cubic-oriented and/or rhombohedral-oriented surface of the annealed transparent and conductive oxide layer. The annealing (115) of the transparent conductive oxide layer and the formation (120) of the nanorod array are performed using molecular beam epitaxy (MBE). The nanorods of the nanorod array comprise a group-ill nitride-based material and are non-polar.
(FR)
Un procédé de formation d'un dispositif semi-conducteur optoélectronique consiste à fournir (105) un substrat amorphe. Une couche d'oxyde conducteur et transparent est déposée (110) sur le substrat amorphe. La couche d'oxyde conducteur et transparent est recuite (115) pour former une couche d'oxyde conducteur et transparent recuite ayant une surface orientée cubique et/ou orientée rhomboédrique. Un réseau de nanotiges est formé (120) sur la surface orientée cubique et/ou orientée rhomboédrique de la couche d'oxyde conducteur et transparent recuite. Le recuit (115) de la couche d'oxyde conducteur transparent et la formation (120) du réseau de nanotiges sont réalisés à l'aide d'une épitaxie par jets moléculaires (MBE). Les nanotiges du réseau de nanotiges comprennent un matériau à base de nitrure du groupe III et sont non polaires.
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