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1. WO2020094944 - METHOD FOR COLLECTIVE PRODUCTION OF A PLURALITY OF SEMICONDUCTOR STRUCTURES

Publication Number WO/2020/094944
Publication Date 14.05.2020
International Application No. PCT/FR2019/052538
International Filing Date 24.10.2019
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
Applicants
  • SOITEC [FR]/[FR]
Inventors
  • SOTTA, David
Agents
  • BREESE, Pierre
Priority Data
186029408.11.2018FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) METHOD FOR COLLECTIVE PRODUCTION OF A PLURALITY OF SEMICONDUCTOR STRUCTURES
(FR) PROCEDE DE FABRICATION COLLECTIVE D'UNE PLURALITE DE STRUCTURES SEMI-CONDUCTRICES
Abstract
(EN)
The invention relates to a method for the collective production of a plurality of semiconductor structures (8). It comprises providing a substrate formed by a support (2) having a main face, a dielectric layer (3) disposed on the main face of the support (2) and a plurality of crystalline semiconductor growth islands (4) disposed on the dielectric layer (3). It also comprises forming at least one crystalline semiconductor active layer (6) on the growth islands. According to the invention, the method comprises, after the step of forming the active layer (6), the forming of trenches (7) in the active layer (6) and in the growth islands (4) in order to define the plurality of semiconductor structures (8).
(FR)
L'invention porte sur un procédé de fabrication collective d'une pluralité de structures semi-conductrices (8). Il comprend la fourniture d'un substrat formé d'un support (2) présentant une face principale, d'une couche diélectrique (3) disposée sur la face principale du support (2) et d'une pluralité d'îlots de croissance semi-conducteurs cristallins (4) disposés sur la couche diélectrique (3). Il comprend également la formation d'au moins une couche active semi-conductrice cristalline (6) sur les îlots de croissance. Selon l'invention le procédé comprend, après l'étape de formation de la couche active (6), la formation de tranchées (7) dans la couche active (6) et dans les îlots de croissance (4) pour définir la pluralité de structures semi-conductrices (8).
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