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1. WO2020094898 - SYSTEM OF GRAPHENE TRANSISTORS FOR MEASURING ELECTROPHYSIOLOGICAL SIGNALS

Publication Number WO/2020/094898
Publication Date 14.05.2020
International Application No. PCT/ES2019/070728
International Filing Date 28.10.2019
IPC
H01L 29/772 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
A61B 5/00 2006.01
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
BDIAGNOSIS; SURGERY; IDENTIFICATION
5Measuring for diagnostic purposes; Identification of persons
CPC
A61B 5/00
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
BDIAGNOSIS; SURGERY; IDENTIFICATION
5Detecting, measuring or recording for diagnostic purposes
H01L 29/772
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
Applicants
  • CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS [ES]/[ES]
  • CONSORCIO CENTRO DE INVESTIGACIÓN BIOMEDICA EN RED, M.P. [ES]/[ES]
  • INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS (ICREA) [ES]/[ES]
  • FUNDACIÓ INSTITUT CATALÀ DE NANOCIÈNCIA I NANOTECNOLOGIA (ICN2) [ES]/[ES]
  • INSTITUTO DE INVESTIGACIONES BIOMÉDICAS AUGUST PI SUNYER (IDIBAPS) [ES]/[ES]
Inventors
  • GUIMERÁ BRUNET, Antón
  • MASVIDAL CODINA, Eduard
  • VILLA SANZ, Rosa
  • GARRIDO ARIZA, José Antonio
  • ILLA VILA, Xavier
  • SANCHEZ VIVES, María Victoria
Agents
  • PONS ARIÑO, Angel
Priority Data
P20183106806.11.2018ES
Publication Language Spanish (ES)
Filing Language Spanish (ES)
Designated States
Title
(EN) SYSTEM OF GRAPHENE TRANSISTORS FOR MEASURING ELECTROPHYSIOLOGICAL SIGNALS
(ES) SISTEMA DE TRANSISTORES DE GRAFENO PARA MEDIR SEÑALES ELECTROFISIOLÓGICAS
(FR) SYSTÈME À TRANSISTORS EN GRAPHÈNE POUR MESURER DES SIGNAUX ÉLECTROPHYSIOLOGIQUES
Abstract
(EN)
The invention is based on flexible matrices of graphene transistors with epicortical and intracortical field effects, which can register infraslow signals and signals in a bandwidth that is typical of local field potentials. The object of the invention is based on the graphene transistor system for measuring electrophysiological signals, comprising a processing unit and at least one graphene transistor with the graphene as the channel material contacted via two terminals, to which a variable voltage source is joined at the drain and source terminals of the transistor, with a reference as a gate terminal, and at least one filter for acquiring and dividing the signal of the transistor into at least two frequency bands, low and high, in which the first and second signals are amplified respectively with a gain value.
(ES)
Basado en matrices flexibles de transistores grafeno de efecto de campo epicorticales y intracorticales, que pueden registrar señales infralentas y señales en un ancho de banda típico de potenciales de campo local. El objeto de la invención se basa en el sistema del transistor del grafeno para medir señales electrofisiológicas, comprendiendo una unidad de proceso, y al menos un transistor del grafeno con el grafeno como material del canal contactado por dos terminales, a los cuales se une una fuente de tensión variable en los terminales de drenador y de fuente del transistor referido a la tensión de la puerta, y al menos un filtro de adquisición y división de la señal del transistor en al menos dos bandas de frecuencia, baja y alta, en el que las señales primera y segunda se amplifican respectivamente con un valor de ganancia.
(FR)
Le système selon l'invention repose sur des matrices souples de transistors en graphène à effet de champ épicorticales et intracorticales qui peuvent enregistrer des signaux infralents et des signaux dans une largeur de bande typique de potentiels à champ local. L'objet de l'invention est basé sur le système du transistor en graphène pour mesurer des signaux électrophysiologiques, comprenant une unité de traitement et au moins un transistor en graphène dans lequel le graphène en tant que matériau du canal est en contact avec deux bornes, auxquelles est reliée une source à tension variable aux bornes du drain et de la source du transistor soumis à la tension de grille, et au moins un filtre d'acquisition et division du signal du transistor dans au moins deux bandes de fréquence, haute et basse, dans lequel les signaux, le premier et le second, sont amplifiés respectivement avec une valeur de gain.
Also published as
Latest bibliographic data on file with the International Bureau