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1. WO2020094520 - METHOD FOR CONTROLLING A SUBSTRATE PROCESSING DEVICE AS WELL AS SUBSTRATE PROCESSING DEVICE

Publication Number WO/2020/094520
Publication Date 14.05.2020
International Application No. PCT/EP2019/079940
International Filing Date 31.10.2019
IPC
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
G01B 11/06 2006.01
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11Measuring arrangements characterised by the use of optical means
02for measuring length, width, or thickness
06for measuring thickness
G01N 21/95 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws, defects or contamination
95characterised by the material or shape of the object to be examined
CPC
G01B 11/0616
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11Measuring arrangements characterised by the use of optical means
02for measuring length, width or thickness
06for measuring thickness, e.g. of sheet material
0616of coating
G01N 21/9501
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
95characterised by the material or shape of the object to be examined
9501Semiconductor wafers
H01L 21/67253
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67242Apparatus for monitoring, sorting or marking
67253Process monitoring, e.g. flow or thickness monitoring
H01L 22/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
12for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Applicants
  • SUSS MICROTEC LITHOGRAPHY GMBH [DE]/[DE]
Inventors
  • SAVAGE, Gregory
Agents
  • PRINZ & PARTNER MBB PATENT- UND RECHTSANWÄLTE
Priority Data
202193805.11.2018NL
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR CONTROLLING A SUBSTRATE PROCESSING DEVICE AS WELL AS SUBSTRATE PROCESSING DEVICE
(FR) PROCÉDÉ DE COMMANDE D'UN DISPOSITIF DE TRAITEMENT DE SUBSTRAT AINSI QUE DISPOSITIF DE TRAITEMENT DE SUBSTRAT
Abstract
(EN)
A method for controlling a substrate processing device (10) has the following steps: a) coating a substrate (26) with a layer of a coating material (24) using a coating unit (12) of the substrate processing device (10), b) performing thickness measurements of the layer of the coating material (24) applied to the substrate (26) using a measurement device (14), c) analyzing the thickness measurements using an analysis module (16), d) based on the result of the analysis, adjusting the process parameters for coating, and e) coating a second substrate (26) with a layer of the coating material (24) using the adjusted process parameters using the coating unit (12), wherein the analysis of the thickness measurements is performed using Spatial Signature Analysis, pattern recognition, an artificial neural network and/or determining defects and deviations of the thickness from a desired thickness. Further, a substrate processing device (10) is shown.
(FR)
La présente invention concerne un procédé de commande d'un dispositif de traitement de substrat (10) comprenant les étapes suivantes : a) revêtement d'un substrat (26) avec une couche d'un matériau de revêtement (24) à l'aide d'une unité de revêtement (12) du dispositif de traitement de substrat (10), b) réalisation des mesures d'épaisseur de la couche du matériau de revêtement (24) appliquée au substrat (26) à l'aide d'un dispositif de mesure (14), c) analyse des mesures d'épaisseur à l'aide d'un module d'analyse (16), d) sur la base du résultat de l'analyse, ajustement des paramètres de traitement pour le revêtement, et e) revêtement d'un deuxième substrat (26) avec une couche du matériau de revêtement (24) à l'aide des paramètres de traitement ajustés au moyen de l'unité de revêtement (12), l'analyse des mesures d'épaisseur étant réalisée à l'aide d'une analyse de signature spatiale, d'une reconnaissance de motif, d'un réseau neuronal artificiel et/ou de la détermination de défauts et d'écarts de l'épaisseur par rapport à une épaisseur souhaitée. La présente invention concerne, en outre, un dispositif de traitement de substrat (10).
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